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MOST SIGNIFICANT CONTRIBUTION/ACCOMPLISHMENT:


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Jagdish (Jay) Narayan

The John C. C. Fan Family Distinguished Chair Professor and Director

NSF Center for Advanced Materials and Smart Structures

Room 3030, Engineering Building I, Centennial Campus

Department of Materials Science and Engineering

North Carolina State University

Raleigh, NC  27695-7907.

Phone: (919) 515-7874; Fax: (919) 515-7642; E-mail: J_NARAYAN@NCSU.EDU

Education

Ph.D. (1971) and M.S. (1970) University of California, Berkeley; B. Tech. (1969 Univ. First Rank Medalist, Highest Hons. & Dist.) I.I.T., Kanpur, India, 1997 Distinguished Alumnus Award

Major field- Materials Science and Eng; Minor fields- Electrical and Computer Eng and Solid State Physics

Record of Professional Work Experience

2002-  The John C. C. Fan Family Distinguished Chair Professor

    1. NCSU Distinguished University Professor (Materials Science and Engineering, Electrical and Computer Engineering and Physics) and Director of Center for Advanced Materials and Smart Structures

2007-  ORNL Distinguished Guest Scientist

    1. National Science Foundation, Division of Materials Research, Director*
    1. North Carolina State University, Professor
    1. Microelectronics Center of North Carolina, Director
    1. Oak Ridge National Lab., Senior Scientist and Leader of Thin Film and Electron Microscopy Group
    2. Lawrence Berkeley National Lab., Research Metallurgist

*The DMR is the largest division of the NSF with over twenty Research Program Directorates and over $250M annual budget. 

Specific Outstanding Technical and Professional Engineering Accomplishments and Contributions

Starting with his doctoral thesis, Narayan provided first direct evidence for the presence of vacancies and interstitials in ionic solids, and established, via rigorous in-situ diffusion experiments, the activation energy for pipe diffusion along the dislocations and grain boundaries to be half that in the bulk.  This research, recognized by numerous Awards, has proven to be pivotal to our understanding of basic phenomena in metals, ceramics and electronic materials and processing.  Narayan is internationally known for his seminal contributions in laser processing of novel materials including laser annealing and pulsed laser deposition, atomic-scale characterization, and atomistic modeling of dislocations and interfaces.  He invented novel supersaturated semiconductor alloys formed by solid phase epitaxy, and by liquid phase crystallization where melt-quenching rates are billions of degrees per second.  This research, featured twice in Science Magazine (5/4/1979 & 4/19/1991 issues), resulted in four U.S. patents and two IR-100 Awards.  Narayan discovered and patented new nanocrystalline metal-ceramic composites, invented 1-2-4 (Y1Ba2Cu4O8) superconductor with Tc~80-100 K, co-originated laser ablation for thin film deposition, and patented a novel method for synthesizing thin films.

The 1982 ORNL Review, Summarizing the Four Decades of ORNL Achievements, recorded three of Narayan’s achievements (relating to his three unprecedented IR-100 Awards) out of 12 totals in the field of materials science and engineering. This is truly remarkable considering the fact the materials field represents a major mission of the Laboratory in which many billions of dollars were spent over the last forty years, and the fact that Narayan was associated with the ORNL only in the last decade.   He established atomic structure and properties of dislocations and grain boundaries in semiconductors and high –Tc superconductors.  He discovered the orientation dependence of core energy of dislocations, critical to obtaining dislocation-free silicon wafers for devices.  More recently, he has pioneered and patented a new concept of domain epitaxy where an integral number of lattice constants of the film match that of the substrate in large lattice mismatched systems.  The domain epitaxy is key to the formation of large-misfit thin film heterostructures, such as TiN films on silicon with 4/3 matching, and III-nitrides & ZnO films on sapphire with 6/7 matching. Narayan has invented new cubic ZnMgO alloys which can be grown epitaxially on (100)silicon  substrates for integration between optoelectronic and spintronic devices. Thus, Narayan’s inventions on domain matching epitaxy and fundamental advances in defects and interfaces address a major grand challenge for next-generation solid state devices, which is related to the formation of device-quality single-crystal thin films on substrates with lattice misfit ranging from 2% to 30%. These thin-film heterostructures lead to a successful integration of device functionality ranging from digital computing and signal processing, r-f devices and optical sources, to infrared detection systems. Narayan has discovered and patented a new method of self-assembly for processing nanostructured magnetic, photonic, electronic and structural materials. This research was judged by the National Science Foundation to be a major breakthrough in 2004. His pioneering research on synthesis and modeling of nanocrystalline metals, ceramics, and composites has established a solid foundation and clarified long-standing controversies related to their structure-property correlations. One of his ideas related to quantum confinement by thickness variation (creating Nano Pocket@) is being used by Kopin Corp. to manufacture high-efficiency light emitting diodes for solid state lighting. He recently delivered The Edward DeMille Campbell memorial lecture entitled, “New Frontiers in Thin Film Growth and Nanomaterials,” at the Annual ASM International Meeting (October 17-20, 2004) in Columbus, Ohio. 

Impact of Work 

Profound impact on thin film epitaxy across the misfit scale, defects and interfaces, laser processing, semiconductor doping and novel materials processing which led to a record three IR-100 Awards for new materials and technologies.  Narayan holds twenty five patents on domain matching epitaxy, defect reduction in thin film heterostructures, new materials, and processing of semiconductor devices. He holds ten patents with Kopin Corp (and Kobrite Corp), which are pivotal to their highly successful CYBER display, solid state lighting and device business. The Kopin Corp, MIT spin-off and Massachusetts based multinational Corp, has licensed patents related to domain epitaxy  and new cubic ZnMgO and ZnCdO alloys from NCSU to manufacture III-nitride and II-oxide based light emitting diodes and lasers covering the entire range of the visible spectrum. Using DME and 3-D thin-film growth concepts (Volmer-Weber growth), Narayan invented 3-D self-assembled nanostructures with oriented nanodots (US Patent # 7,105,118, Sept 12, 2006), which NSF hailed as one of the breakthroughs of the year (2004).   

Landmark Publications 

Properties of Vacancies and Interstitials in MgO – Scripta Met 6, 259 (1972) and Phil Mag. 26, 1179 (1972); J. Appl. Phys 43, 4862(1972); Acta Met 21, 533(1973). 

Laser Annealing of Ion Implanted Semiconductors – Appl. Phys. Lett. 32, 139 (1978) Citation Classic, and (Invited) Science 204, 461 (1979) Citation Classic; Pulsed Laser Melting – Phil Mag 43, 1515 (1981) and Phys. Rev. Lett. 52, 561 (1983). 

Interface Instability and Formation of Supersaturated Semiconductor Alloys – J. Appl. Phys. 52, 1289 (1981) and Appl. Phys. Lett. 41, 239 (1982). 

Pulsed Laser Deposition and Processing of Thin Films – Appl. Phys. Lett. 51, 1845 (1987) and Physical Review B41, 8843 (1990) Citation Classic, and Science 252, 416 (1991) and (Invited) International Materials Reviews 42, 137 (1997). 

Atomic Structure of Dislocations and Grain Boundaries – Phil. Mag. A71, 537 (1995); Phil Mag. A72, 297 (1995) and Phil Mag. A73, 767 (1996); J. Appl. Phys.92, 7122(2002). 

Domain Epitaxy and Thin Films – Appl. Phys. Lett. 61, 1290 (1992); J. Appl. Phys. 84, 2597 (1998); J. Appl Phys. (Invited Review) 87, 965 (2000); J. Appl. Phys.93,278(2003) and Met and Mat Trans 36, 5 (2005)- Edward DeMille Campbell Lecture. 

Novel Nanocrystalline Materials – Phys. Rev. Lett. 46, 1491 (1981); Phil Mag A 49,287(1984); Phil Mag 49, 475(1984); US Patent 4,376,755(1984); Appl. Phys. Lett. 76, 43 (2000); J. Nanoparticle Research 2, 91(2000);4,265(2002); Acta materialia 50, 3527 (2002); Acta Materialia 50, 5067(2002); Acta Materialia 50, 3995(2002); Acta Materialia 50, 4823(2002); J. Nanoscience and Nanotechnology 4, 726 (2004); J. Appl. Phys. 89, 132502 (12006); J. Appl Phys 100, 034309 (2006). 

III-nitride and II-oxide Based Materials- Appl. Phys Lett 67, 1549(1995); J. Appl Phys. 84,2597(1998); Appl Phys. Lett. 74, 2465(1999); J. Appl Phys, 85, 7884(1999); Solid State Comm 121, 9(2002); Appl. Phys Lett 81,841(2002); Sold State Comm 121, 371(2002); Appl. Phys Lett 81, 3978(2002). 

Perovskite Based Materials- J. Appl. Phys. 80,6720(1996); Appl. Phys Lett 71, 1709(1997); Appl. Phys Lett 76, 1458(2000); Appl. Phys Lett 80,4039(2002); Solid State Comm 121, 357(2002) and 121 357(2002); appl Phys Lett 80,1337(2002). 

Diluted Magnetic Semiconductors- Solid State Comm 121, 371 (2002); Appl. Phys Lett 88, 142503 (2006); J. Elect Mat 35, 852 (2006); Appl. Phys Lett 88, 142511 (2006); Applied Phys Lett 84, 5255(2004); Appl Phys Lett 87, 172502 (2005). 

Smart Materials and Transparent Conducting Oxides- J. Appl. Phys 100, 103524 (2006); J. Appl. Phys 100, 123 102 (2006); J. Appl Phys 100, 093519 (2006); J. Appl Phys 100, 033713 (2006); Appl Phys Lett 88, 032106 (2006); J. Appl Phys 97, 083539 (2005). 

Principal Technical Society Membership and Activities 

Life Member and Fellow TMS (The Materials Society) and National Academy of Sciences, India – both limited to 100 members; Life Member and Fellow of APS; Fellow of ASM International; Fellow of AAAS;  Materials Research Society Governing Board Councillor (1984-87); MRS Fall Meeting Co-chair (1984), MRS Long-Range Planning (1987-89); Executive council-Electronic, Magnetic and Photonic Materials Division of TMS; DOE-National Labs. and NSF-major facilities reviewer; TMS Awards Chair-EMPMD; Board member Kopin (Highly Successful Advanced Materials and Display Devices Co.); Consultants at H. C. Starck, Inc., Advanced Ceramics, Lockheed Martin, Honeywell and Spire Corp.; Director – Division of Materials Research, NSF (1990-92); NSF Representative to NRC Committees; NSF Chair for the Presidential Materials (AMPP) Initiative; Member – University of Alabama Advisory Committee; Member – Visiting Committee (School of Materials Science and Engineering) Georgia Tech.; TMS Bruce Chalmers Award Committee Member and Chair (2000-03); Army Research Office (ARO) Board Member and Chairman of the Board (2002); ASM Nominating Committee Member; ASM Gold Metal Committee Member and Chair (2001-04); International Materials Reviews Committee Member:  TMS John Bardeen Committee Member and Chair (2004-07). 
 

Professional Awards and Recognition 

2008 MRS Inaugural Fellow, 2005 TMS Symposium on NEW FONTIERS IN THIN FILM GROWTH AND NANOMATERIALS held in honor of Professor Narayan at the 134th  TMS Annual Meeting in San Francisco; Journal of Electronic Materials (May 2006 Issue) Published honoring Professor Narayan; Winner of 2004 Edward DeMille Campbell Lecture and ASM Campbell Prize; 1999 ASM – International Gold Metal (Highest ASM Honor); Life Member and Fellow TMS elected 1999 (Highest TMS Honor); Honorary Membership MRS-India (Highest Honor) Elected in 2000; ASM Best-in-Class Award (1971); DOE (Div. of Materials Sciences) Award for Outstanding Research (1981); IR-100 Award (1979) for Laser Diffused p-n Junctions and Devices; IR-100 Award (1981) for Novel Supersaturated Semiconductor Alloys; IR-100 Award (1982) for New Nanocrystalline Metal-Ceramic Composites; 1992 NSF Distinguished Service Award; 1997 IIT/K Distinguished Alumnus Award; NCSU – Distinguished University Research Professorship (1990-    ); Fellow and Life Member (APS, NAS – limited to 100 members); Fellow (ASM, AAAS); 2001ASM-International Best Paper Award;  EMSA – Best Paper Award (1994); One of the most cited authors for Journal articles published 1980 through 1997 (Max-Planck Citation Index), Web of Science: over 10,700 Citations, hi-index 49, Citation Classics 17. 

Research and Training of Students 

Professor Narayan directs the prestigious NSF Center for Advanced Materials and Smart Structures with a total ($1.2M annual funding to NCSU and NC A&T).  The Center was funded initially in 1998 for five years and has recently been renewed for the next five years. He also has ONR, NSF-NIRT and ARO funded Center for Nanostructured Materials with $275K/yr. In addition, he has had over $8.0M funding for his cutting-edge research in advanced materials and devices since 1984.  He has published over 1,000 papers in archival journals, edited 9 books and received 25 patents. Three of these patents led to unprecedented 3 IR-100 Awards for three new technologies. In 2004-5, Professor Narayan has published over forty Journal and reviewed conference proceedings papers. Narayan has graduated over 60 Ph.D. students and trained 25 Postdocs who are employed in leading companies such as IBM, INTEL, Motorola, Texas Instruments, AMD; National Labs., and universities.  Fourteen of them are in tenured and tenure-track faculty positions, six of these students received NSF-NYI/CAREER Award, One Presidential Early CAREER (PECASE) Award, five MRS-Best Graduate Student Medal, one TMS Hardy Gold Medal, three TMS Young Scientist Award, one IBM Faculty Awards, EMSA and ASM Best Paper Awards, etc. In 2005-6, he graduated five PhD students, two joined INTEL; one Applied Materials; one Texas A&M faculty; and one Post doctoral fellow at Los Alamos National Lab. 

Teaching Accomplishments 

Since his tenure at NCSU in 1984, Professor Narayan has developed a total of seven courses: 

  1. MAT 702 – Defects and Mass Transport in Solids
  2. MAT 760 – Materials Science and Processing of Semiconductor Devices
  3.       MAT 770 – Defects, Diffusion and Ion Implantation in Semiconductors

4-5. MAT 791 A & B – Advanced Materials and Smart Structures I & II

    1. MAT 791 J & K – Advanced Materials Processing I & II
 

Developed seven graduate level courses, two of them are taught on Distance-Education Network. These courses MAT-760 (Materials Science and Processing of Semiconductor Devices)  and MAT -770 (Defects, Diffusion and ion Implantation in Semiconductors) are very popular among NCSU students and practicing engineers in microelectronics and photonics industry such as IBM, INTEL, Motorola, AMD, to update their skills and finish the M.S. degrees. Narayan pioneered Distance-Education teaching in North Carolina, starting with his first course in 1985. The GA/Office of the President has provided a special grant as apart of the UNC E-learning Initiative to incorporate these courses into a special degree program in Photonics and Microelectronics. Narayan has the GA grant to develop MS in Nanoengineering which will be offered via Engineering Online nationally and internationally. 
 

MOST SIGNIFICANT CONTRIBUTION/ACCOMPLISHMENT: 

  Laser Processing of Advanced Materials

    (1) Published FIRST papers in laser annealing of Ion Implanted semiconductors showing a complete removal of displacement damage and electrical activation dopants (U.S. Patent, IR-100 Award and DOE Award).

    (I) "Laser Annealing of Boron Implanted Silicon" by R.T. Young, C.W. White, G.J. Clark, J. Narayan, W.H. Christie, M. Murakami, P.W. King, and S.D. Kramer, Appl. Phys. Lett. 32, 139 (1978).

    (II) "A comparative study of Laser and Thermal Annealing of Boron Implanted Silicon", J. Narayan, R.T. Young, and C.W. White, J. Appl. Phys. 49, 3912 (1978).

    (III) "Laser Annealing of Diffusion Induced Imperfections in Silicon", R.T. Young and J. Narayan, Appl. Phys. Lett. 33, 14 (1978).

    (IV) "Laser Annealing of Ion Implanted Semiconductors", C.W. White, J. Narayan and R.T. Young, Invited Article in Science 204, 461 (1979).

    (2) Confirmation of the Melting model by annealing of microstructural defects and precipitates and growth of dislocations.

    (I) "Depth of Melting by Pulsed Laser Irradiation", J. Narayan, Appl. Phys. Lett. 34, 312 (1979).

    (II) "Growth of Dislocations During Laser Melting and Solidification", J. Narayan and F.W. Young, Jr., Appl. Phys. Lett. 35, 330 (1979).

    (III) "Melting Phenomenon and Properties of Defects associated with Pulsed Laser Irradiation", J. Narayan and C.W. White, Phil. Mag. 43, 1515 (1981).

    (IV) "Pulsed Laser Melting of Amorphous Silicon: Time-resolved Measurements and Model Calculations", D.H. Lowndes, R.F. Wood and J. Narayan, Phys. Rev. Lett. 52, 561 (1983).

    (3) Novel method for forming p-n junction by dopant deposition followed by laser melting and solidification (U.S. Patent + IR-100 Award).

    "P-n Junction Formation in Boron Deposited Silicon by laser-Induced Diffusion", J. Narayan, R.T. Young, R.F. Wood and W.H. Christie, Appl. Phys. Lett. 33, 338 (1978).

    (4) Invented a novel method for forming ohmic contacts on wide-band-gap semiconductors based laser melting and interfacial reaction (U.S. Patent).

    "Formation of Ohmic Contacts in Semiconducting Oxides", J. Narayan and V.N. Shukla, Appl. Phys. Lett. 51, 3444 (1980).

    (5) Formation of Supersaturated semiconductor alloys by laser melting and solid-phase-epitaxial growth of dopant implanted layers and rapid quenching (U.S. Patent + IR-100 Award)

    (I) "Formation of Metastable Supersaturated Solid Solutions...", J. Narayan and O.W. Holland, Appl. Phys. Lett. 41, 239 (1982).

    (II) "Interface Instability and Cell Formation in Ion Implanted and Laser Annealed Silicon", J. Narayan, J. Appl. Phys. 52, 1289 (1981).

    (III) "Solid-phase-epitaxial growth and formation of metastable alloys in ion implanted silicon", J. Narayan, O.W. Holland and B.R. Appleton, J. Vac. Sc. Tech. B1, 871 (1983).

    (6) Transition to flame annealing or rapid thermal annealing of semiconductors —> Published first papers in this area immense technological significance.

    (I) "Flame Annealing of Arsenic- and Boron-Implanted Silicon", J. Narayan and R.T. Young, Appl. Phys. Lett. 42, 466 (1983).

    (II) "Rapid Thermal Annealing of Arsenic- and Boron-Implanted Silicon", J. Narayan et al., Appl. Phys. Lett. 43, 957 (1983).

(7) Transition to Laser Surface Modification of Ceramics.

    (I) "Ion Beam and Laser Mixing of Nickel Overlayers on Silicon Carbide", J. Narayan et al., Appl. Phys. Lett. 56, 1577 (1984).

    (II) "Laser Surface Modification of Metal-coated Ceramics", R.K. Singh, K. Jagannadham, and J. Narayan, J. Mater. Res. 3, 1119 (1988).

    (III) "Mechanisms of Improvement of Fracture Strength in Laser-Surface-Modified Ceramics", K. Jagannadham and J. Narayan, J. Am. Ceram. Soc. 72, 1185 (1989).

(8) Transition to Laser Evaporation - Pulsed Laser Deposition of Thin Films (2U.S. Patents)

    Published first experimental (concurrently with Bell Core Group) and theoretical papers on pulsed laser deposition of thin films and obtained record critical current density (5.0x106A cm-2 at 77K) value in PLD high Tc films.

    (I) "Formation of Thin Films by a Laser Processing Method", J. Narayan et al., Appl. Phys. Lett. 51, 1845 (1987).

    (II) "In-situ Processing of Epitaxial Y-Ba-Cu-O Thin Films" by R.K. Singh, J. Narayan, Appl. Phys. Lett. 54, 2271 (1989).

    (III) "A Novel Method for Simulating Laser-solid Interactions in Semiconductors and Layers structures", R.K. Singh and J. Narayan, Mat. Sc. and Eng. B3, 217 (1989).

    (IV) "Theoretical Model for Deposition of Superconducting Thin Films using Pulsed Laser Evaporation Technique", R.K. Singh, O.W. Holland and J. Narayan, J. Appl. Phys. 68, 233 (1990).

    (V) "Pulsed Laser Evaporation Technique for Deposition of Thin Films", R.K. Singh and J. Narayan, Phys. Rev. B41, 8843 (1990).

    (9) Invented Domain Epitaxy where integral multiples of lattice constants or major planes match across the film-substrate interface, e.g., TiN/Si, Cu/TiN/Si, Ysz/Y123 (J. Narayan, U.S. Patent 5,406,123, 4/11/1995)

    (I) "Epitaxial Growth of TiN Films on (100) Silicon Substrates by Laser Physical Vapor Deposition", J. Narayan, P. Tiwari, X. Chen, J. Singh, R. Chowdhury, and T. Zheleva, Appl. Phys. Lett. 61, 1290 (1992).

    (II) "Epitaxial Growth in Large-Lattice-Mismatch Systems", T. Zheleva, K. Jagannadham and J. Narayan, J. Appl. Phys. 75, 860 (1994).

    1. "Pulsed Laser Deposition of Epitaxial Si/TiN/Si(100) Heterostructures", R. Chowdhury, X. Chen and J. Narayan, Appl. Phys. Lett. 64 (10), 1236 (1994).
    2. "Pulsed Laser Deposition and Characterization of Epitaxial Cu/TiN/Si(100) Heterostructures", R. Chowdhury, X. Chen, P. Tiwari and J. Narayan, Appl. Phys. Lett. 65, 2565 (1994).
    3. “ Domain Matching Epitaxy- a Unified Paradigm for Thin Film Growth,” J. Narayan and B.C. Larson, J. Appl. Phys. 93, 278(2003).

(10)  Domain Matching Epitaxy for the Growth of III-nitrides, II-oxides and Perovskite based materials on sapphire and silicon

(I) “Epitaxial Growth of AlN on Si(111),” R. D. Vispute, J. Narayan, H. Wu, J. Appl. Phys. 77, 4724(1995).

(II) “ High-Quality Epitaxial AlN on Sapphire (0001),” R. D. Vispute, H. Wu, J. Narayan, Appl. Phys. Lett. 67, 1549(1995).

(III) “Defects and Interfaces in ZnO/Sapphire and AlN/ZnO/Sapphire Heterostructures,” J. Narayan , J. Appl. Phys. 84, 2597(1998).

(IV) “ Novel Cubic ZnMgO Epitaxial Heterostructures on Si(100),” J. Narayan et. Al.  Solid State Comm 121, 9(2002).

(V) “ Formation of Epitaxial Au/Ni/Au Ohmic Contacts,” J. Narayan et al. Appl. Phys. Lett. 81, 3978(2002).

(VI) “ Strain-induced tuning of metal-insulator transition in NdNiO3,” A. Tiwari, C. Jin, J, Narayan, Appl. Phys. Lett. 80, 4039(2002).

    1. “ Growth of Epitaxial NdNiO3 and Integration with Si(100),” A. Tiwari, C. Jin, J. Narayan, Appl. Phys. Lett. 80, 1337(2002).
    2. “Characteristics of nucleation layer and epitaxy in GaN/sapphire heterostructures,” J. Narayan, P. Pant, A. Chugh, H. Choi, and J. C. C. Fan, J. Appl. Phys. 99, 054313 (2006).

(11) Fundamentals of Defects and Interfaces in Thin Film Heterostructures

(I) “ Misfit Dislocations in Ge/Si Heterostructures,” S. Oktyabrsky, H. Wu, J. Narayan, Phil Mag. 71,537(1995).

(II) “ New Mechanism of Formation of Stacking Faults in Ge/Si Heterostructures,” S. Oktyabrsky and J. Narayan, Phil. Mag. 72, 305 (1995).

(III) “ Role of Surface Steps in Misfit Dislocation Nucleation and Critical Thickness Determination,” M. Ichimura and J. Narayan, Mat Sci and Eng B 31, 299(1995).

(IV) “Atomic Study of Dislocation Nucleation in Ge/Si Heterostructures,” M. Ichimura and J. Narayan, Phil. Mag. 72,281(1995).

(V) “ Negative Step Surface Energy Change and Misfit Dislocations in Semiconductor Heterostructures,” M. Ichimura and J. Narayan, Phil. Mag. 72, 297(1995).

(VI) “ Formation of Misfit Dislocations in Thin Film Heterostructures,” J. Narayan and S. Oktyabrsky, J. Appl. Phys. 92,7122(2002).

(VII) “Z-Contrast Imaging of Dislocation Cores at GaAs/Si Interface,” S. Lopatin, S. Pennycook, J. Narayan, Appl. Phys Lett 81,2728(2002).

(12) Novel Nanostructured Materials: Narayan started his pioneering research on metal-ceramic nanocomposites in 1981

(I) “Nickel Colloids in MgO,” J. Narayan, Y. Chen, and R. M. Moon, Phys. Rev. Lett 46, 1491(1981); Phil. Mag. A 49,287(1984); Phil Mag. A49, 475(1984); US Patent # 4,376 755(March 15,1983).

(II) “ Size and Interface Control of novel Nanocrystalline Materials,” J. Narayan, J. Nanoparticle Res. 91, 7(2000).

(III) “ Structure and Properties of Nanocrystalline Zinc Films,” J. Narayan et al, J. Nanoparticle Res. 4,265(2002).

(IV)  “ Mechanism of Grain Size Softening in Nanocrystalline Zn,” H. Conrad and J. Narayan, Appl. Phys Lett. 81,2241(2002).

(V)“ Studies of Deformation Mechanisms in Ultra-fine-grained and Nanostructured Zn,” X. Zhang..and J. Narayan, Acta Mater 50, 4823(2002).

(VI) “ Effect of Thickness Variation in High-efficiency InGaN/GaN LEDs,” J. Nrayan et al. Appl. Phys. Lett 81, 841(2002).

(VII) “ Role of Self-assembled Gold Nanodots on Electrical and Optical Properties of ZnO,” A. Tiwari.. and J. Narayan, J. Nanoscience and Nanotechnology 3, 368(2003). 

PATENTS of  Professor Narayan (from USPTO Website)   


PAT. NO.   Title
1 7,122,841   Bonding pad for gallium nitride-based light-emitting devices
2 7,105,118   Methods of forming three-dimensional nanodot arrays in a matrix
3 6,955,985   Domain epitaxy for thin film growth
4 6,881,983   Efficient light emitting diodes and lasers
5 6,847,052   Light-emitting diode device geometry
6 6,734,091   Electrode for p-type gallium nitride-based semiconductors
7 6,518,077   Method for making optoelectronic and microelectronic devices including cubic ZnMgO and/or CdMgO alloys
8 6,423,983   Optoelectronic and microelectronic devices including cubic ZnMgO and/or CdMgO alloys
9 5,453,153   Zone-melting recrystallization process
10 5,406,123   Single crystal titanium nitride epitaxial on silicon
11 5,221,411   Method for synthesis and processing of continuous monocrystalline diamond thin films
12 5,208,182   Dislocation density reduction in gallium arsenide on silicon heterostructures
13 5,063,202   High transition temperature superconductors
14 5,021,119   Zone-melting recrystallization process
15 4,885,052   Zone-melting recrystallization process
16 4,863,877   Ion implantation and annealing of compound semiconductor layers
17 4,774,630   Apparatus for mounting a semiconductor chip and making electrical connections thereto
18 4,376,755   Production of crystalline refractory metal oxides containing colloidal metal precipitates and useful as solar-effective absorbers
19 4,261,764   Laser method for forming low-resistance ohmic contacts on semiconducting oxides
20 4,181,538   Method for making defect-free zone by laser-annealing of doped silicon
21 4,147,563   Method for forming p-n junctions and solar-cells by laser-beam processing
 
PUB. APP. NO. Title
1 20090042751 Lubricant having nanoparticles and microparticles to enhance fuel efficiency, and a laser synthesis method to create dispersed nanoparticles
2 20070280848 Methods Of Forming Alpha And Beta Tantalum Films With Controlled And New Microstructures
3 20060266442 Methods of forming three-dimensional nanodot arrays in a matrix
4 20060130745 Domain epitaxy for thin film growth
5 20060016388 Domain epitaxy for thin film growth
6 20050161689 Efficient light emitting diodes and lasers
7 20050124161 Growth and integration of epitaxial gallium nitride films with silicon-based devices
8 20040262621 Bonding pad for gallium nitride-based light-emitting devices
9 20040119064 Methods of forming three-dimensional nanodot arrays in a matrix
10 20040077135 Light-emitting diode device geometry
11 20040072381 Domain epitaxy for thin film growth
12 20040000671 Electrode for p-type gallium nitride-based semiconductors
13 20030160246 Efficient light emitting diodes and lasers
14 20030160229 Efficient light emitting diodes and lasers
15 20020084466 Optoelectronic and microelectronic devices including cubic ZnMgO and/or CdMgO alloys
 

     

MOST SIGNIFICANT PUBLICATIONS IN ARCHIVAL JOURNALS FROM A TOTAL LIST OF OVER 560 ARCHIVAL JOURNAL PAPERS

     

    1. J. Narayan and J. Washburn, “Direct Observation of Pipe Diffusion in Magnesium Oxide,” Scripta Met. 6, 259 (1972).

    2. J. Narayan and J. Washburn, “Self Climb of Dislocation Loops in Magnesium Oxide,” Phil. Mag. 26, 1179 (1972).

    3. J. Narayan and J. Washburn, “Stability of Dislocation Loops Near a Free Surface,” J. Appl. Phys. 43, 4862 (1972).

    4. J. Narayan and J. Washburn, “Self Diffusion in Magnesium Oxide,” Acta Met. 21, 533 (1973).

    5. J. Narayan, “Coexistance of Two Charge Density Waves of Different Symmetry in Transition Metal Dichalcogenide 4Hb-TaS2,” Appl. Phys. Lett. 29, 223 (1976).

    6. J. Narayan and B. C. Larson, “Defect Clusters and Annealing in Self-Ion Irradiated Nickel,” J. Appl. Phys. 48, 4536 (1977).

    7. Y. Chen, H. T. Tohver, J. Narayan, and M. M. Abraham, “High Temperature and Ionization-Induced Effects in Lithium-Doped MgO Single Crystals,” Phys. Rev. B 16, 5535 (1977).

    8. J. Narayan and S. M. Ohr, “Residual Image Contrast of Dislocation Loops,” Phys. Stat. Sol. (a) 46, 281 (1978).

    9. R. T. Young, C. W. White, G. J. Clark, J. Narayan, W. H. Christie, M. Murakami, P. W. King and S. D. Kramer, “Laser Annealing of Boron Implanted Silicon,” Appl. Phys. Lett. 32, 139 (1978).

    10. J. Narayan, R. T. Young and C. W. White, “ A Comparative Study of Laser and Thermal Annealing of Boron Implanted Silicon,” J. Appl. Phys. 49, 3912 (1978).

    11. R. T. Young and J. Narayan, “Laser Annealing of Diffusion-Induced Imperfection in Silicon,” Appl. Phys. Lett. 33, 14 (1978).

    12. J. Narayan, M. M. Abraham, H. T. Tohver and Y. Chen, “Electron Microscope Studies on Li-doped MgO,” Phil. Mag. A 38, 247 (1978).

    13. J. B. Lacy, M. M. Abraham, J. L. Boldu, Y. Chen, J. Narayan, and H. T. Tohver, “Oxidation and Reduction of Lithium Containing Magnesium Oxide,” Phys. Rev. B18, 4136 (1978).

    14. J. Narayan, R. T. Young, R. F. Wood and W. H. Christie, “P-n Junction Formation in Boron-Deposited Silicon by Laser-Induced Diffusion,” Appl. Phys. Lett. 33, 338 (1978).

    15. C. W. White, J. Narayan, B. R. Appleton and S. R. Wilson, “Impurity Segregation by Pulsed Laser Irradiation,” J. Appl. Phys. 50, 2967 (1979).

    16. C. W. White, J. Narayan, and R. T. Young, “Laser Annealing of Ion Implanted Semiconductors,” Invited Article for Science Magazine 204, 461 (1979).

    17J. Narayan, “Depth of Melting Produced by Pulsed Laser Irradiation,” Appl. Phys. Lett. 34, 312 (1979).

    18. J. Narayan and F. W. Young, Jr., “Growth of Dislocations During Laser Melting and Solidification,” Appl. Phys. Lett. 35, 330 (1979).

    19. R. T. Young, J. Narayan, and R. F. Wood, “Electrical and Structural Characteristics of Laser-Induced Epitaxial Layers in Silicon,” Appl. Phys. Lett. 35, 448 (1979).

    20. S. M. Ohr and J. Narayan, “Electron Microscope Observation of Shear Cracks in Stainless Steel Single Crystals,” Phil. Mag. 41, 81 (1980).

    21. J. Narayan, “Laser Annealing Under the Oxide Layers in Silicon,” Appl. Phys. Lett. 37, 66 (1980).

    22. J. Narayan, “Laser Processing of Materials,” J. of Metals 33, 15 (1980).

    23. H. R. Kerchner, J. Narayan, D. K. Christen and S. T. Sekula, “Fluxoid Pinning by Small Nitride Precipitates in Niobium,” Phys. Rev. Lett. 44, 1146 (1980).

    24. J. Narayan and V. N. Shukla, “Formation of Ohmic-Contacts in Semi-Conducting Oxides,” J. Appl. Phys. 51, 3444 (1980).

    25. J. Narayan and C. W. White, ”Melting Phenomenon and Properties of Defects Associated with Pulsed Laser Irradiation,” Philos. Mag. 43, 1513 (1981).

    26. Y. Chen, N. Dudney, J. Narayan and V. M. Orera, “Subthreshold [Li] Formation and Decoration of Stained Regions in Crystalline MgO,” Phil. Mag. 44, 1783 (1981).

    27. J. Narayan, “Interface Instability and Cell Formation in Ion-Implanted and Laser Annealed Silicon,” J. Appl. Phys. 52, 1289 (1981).

    28. J. Narayan, Y. Chen and R. M. Moon, “Nickel Colloids in Reduced Nickel-Doped MgO,” Phys. Rev. Lett. 46, 1491 (1981).

    29. J. Narayan and C. W. White, “Melting Phenomenon and Properties of Defects Associated with Pulsed Laser Irradiation,” Phil. Mag. 43, 1515 (1981).

    30. B. R. Appleton, O. W. Holland, J. Narayan,, O. E. Schow, III, J. S. Williams, K. T. Short, and E. Lawson, “Characterization of Ion-Implanted Ge,” Appl. Phys. Lett. 41, 711 (1982).

    31. J. Narayan, “Development of Morphological Instability and Formation of Cells in Silicon Alloys During Pulsed-Laser Irradiation,” J. Cryst. Growth 59, 583 (1982).

    32. J. Narayan, “Interface Structure during Solid-Phase-Epitaxial Growth in Ion-Implanted Semiconductors and a Crystallization Model,” J. Appl. Phys. 53, 8607 (1982).

    33. J. Narayan and O. W. Holland, “Formation of Metastable Supersaturated Solid Solutions in Ion-Implanted Silicon During Solid-Phase Crystallization,” Appl. Phys. Lett. 41, 239 (1982).

    34. P. P. Pronko, A. K. Rai, O. W. Holland, B. R. Appleton, and J. Narayan, “The Material State of Ion-Implanted Cr in GaAs,” J. Appl. Phys. 53, 5621 (1982).

    35. J. Narayan, O. W. Holland and B. R. Appleton, “Solid-Phase-Epitaxial Growth and Formation of Metastable Alloys in Ion Implanted Silicon,” J. Voc. Sci. Tech. B1, 871 (1983).

    36. O. W. Holland, B. R. Appleton, and J. Narayan, “Ion Implantation Damage and Annealing in Germanium,” J. Appl. Phys. 54, 2295 (1983).

    37. J. Narayan, O. W. Holland, R. E. Eby, J. J. Wortman, V. Ozguz, and G. A. Rozgonyi, “Rapid Thermal annealing of Arsenic- and Boron-Implanted Silicon,” Appl. Phys. Lett. 43, 957 (1983).

    38. J. Narayan and R. T. Young, “Flame Annealing of Arsenic- and Boron-Implanted Silicon,” Appl. Phys. Lett. 42, 466 (1983).

    39. D. H. Lowndes, R. F. Wood, and J. Narayan, “Pulsed Laser Melting of Amorphous silicon: Time-Resolved Measurements and Model Calculations,” Phys. Rev. Lett. 52, 561 (1984).

    40. J. Narayan and C. W. White, “Pulsed-Laser Melting of Amorphous Silicon Layers,” Appl. Phys. Lett. 44, 35 (1984).

    41. S. J. Pennycook, J. Narayan, and O. W. Holland, “Point Defect Trapping in Solid-Phase Epitaxially Grown silicon-Antimony Alloys,” J. Appl. Phys. 55, 837 (1984).

    42. J. Narayan, Y. Chen, R. M. Moon, and R. W. Carpenter, “Characterization of Metal Precipitates in Magnesium Oxide - Part I,” Philos. Mag. A49, 287 (1984).

    43. J. Narayan and Y. Chen, “Physical Properties of Oxides Containing Metal Precipitates -Part II,” Philos. Mag. A49, 475 (1984).

    44. S. J. Pennycook, J. Narayan, and O. W. Holland, “Spatially Resolved Measurement of Substitutional dopant Concentrations in Semiconductors,” Appl. Phys. Lett. 44, 547 (1984).

    45. R. F. Wood, D. H. Lowndes, and J. Narayan, “Bulk Nucleation and Amorphous Phase Formation in Highly Undercooled Molten silicon,” Appl. Phys. Lett. 44, 770 (1984)

    46. O. W. Holland and J. Narayan, “Mechanism for Dynamic Annealing During High-flux Ion Irradiation in Si,” Appl. Phys. Lett. 44, 758 (1984).

    47. J. Narayan, D. Fathy, O. S. Oen, and O. W. Holland, “Atomic Structure of Ion Implantation Damage and Process of Amorphization in Semiconductors,” J. Vac. Sci. Technol. A2, 1303 (1984).

    48. J. Narayan and O. W. Holland, “Rapid Thermal Annealing of Ion-Implanted Semiconductors,” J. Apppl. Phys. 56, 2913 (1984).

    49. J. Narayan, D. Fathy, O. W. Holland, B. R. Appleton, R. F. Davis and P. F. Becher, “Ion-Beam and Laser Mixing of Nickel Overlayers on Silicon Carbide,” J. Appl. Phys. 56, 1577 (1984).

    50. S. J. Pennycook and J. Narayan, “Direct Imaging of Dopant Distributions in Silicon by STEM,” Appl. Phys. Lett. 45, 385 (1984).

    51. J. Narayan and O. W. Holland, “Characteristics of Ion Implantation Damage and Annealing Phenomena in Semiconductors,” J. Electrochem. Soc. 131, 2651 (1984).

    52. J. Narayan, C. W. White, O. W. Holland, and M. J. Aziz, “Phase Transformation and Impurity Redistribution During Pulsed Laser Irradiation of Amorphous Silicon Layers,” J. Appl. Phys. 56, 1821 (1984).

    53. O. W. Holland, T. P. Sjoreen, D. Fathy, and J. Narayan, “The Influence of Substrate Temperature on the Formation of Buried Oxide and Surface Crystallinity During High Dose Oxygen Implantation of Si,” Appl. Phys. Lett. 45, 1081 (1984).

    54. S. J. Pennycook, J. Narayan, and O. W. Holland, “Enhanced Diffusion from Interstitial Trapping solid-Phase-Epitaxial Growth of Silicon Alloys,” J. Cryst. Growth 70, 597 (1984).

    55. J. Narayan, “Properties of <100> Dislocations in Magnesium Oxide,” J. Appl. Phys. 57, 2703 (1985).

    56. J. Narayan, O. W. Holland, W. H. Christie, and J. J. Wortman, “Rapid Thermal and Pulsed Laser Annealing of BF2+ Implanted silicon,” J. Appl. Phys. 57, 2709 (1985).

    57. S. J. Pennycook, and J. Narayan, “Atom Location by Axial Electron channeling Analysis,” Phys. Rev. Lett. 54, 1543 (1985).

    58. S. J. Pennycook, J. Narayan, and O. W. Holland, “Transient Enhanced Diffusion During furnace and Rapid thermal Annealing of Ion-Implanted Silicon,” J. Electrochem. Soc. 132, 1962 (1985).

    59. K. Vedam, P. J. McMarr, and J. Narayan, “Spectroscopic Ellipsometry, A New Tool for Nondestructive Depth-Profiling and Characterization of Interfaces,” Appl. Phys. Lett. 47, 339 (1985).

    60. K. Jagannadham and J. Narayan, “Elastic Strain Energy and Forces on Point Defects in a Two-Phase Medium,” J. Mat. Res. 1, 193 (1986).

    61. J. Narayan, T. A. Stephenson, T. Boat, D. Fathy, and S. J. Pennycook, “Formation of Solicides by Rapid Thermal Annealing over Polycrystalline Silicon,” J. Appl. Phys. 60, 631 (1986).

    62. N. M. Ravindrra and J. Narayan, “Optical Properties of Amorphous Silicon and Silicon Oxide,” J. Appl. Phys. 60, 1139 (1986).

    63. S. J. Pennycook, R. J. Culbertson, and J. Narayan, “Formation of Stable Dopant Interstitials During Ion Implantation of silicon,” J. Mater. Res. 1 (3) 476 (1986).

    64. P. J. McMarr, K. Vedam, and J. Narayan, “Spectroscopic Ellipsometry: A new tool for nondestructive depth profiling and characterization of interfaces,” J. Appl. Phys. 59, 694 (1986).

    65. K. Jagannadham and J. Narayan, “Modification of Dopant Profiles due to Surface and Interface Interactions: Applications to Semiconductor Materials,” J. Appl. Phys. 61, 987 (1987).

    66. N. M. Ravindrra and J. Narayan, “Optical Properties of Silicon Related Insulators,” J. Appl. Phys. 61, 2017 (1987).

    67. N. M. Ravindrra, J. Narayan, D. Fathy, J. K. Srivastava and E. A. Irene, “Silicon Oxidation and Si-SiO2 Interfaces of Thin Oxides,” J. Mater. Res. 2, 216 (1987).

    68. A. S. Nandedkar and J. Narayan, “Atomic Structure of Dislocations and Dipoles in Silicon,” Phil. Mag. A56, 625 (1987).

    69. J. Narayan, Y. Chen, and K. Tsang, “Metallic Colloids in Plastically Deformed MgO:Ni Crystals,” Phil. Mag. A55, 807 (1987).

    70. J. Narayan and K. Vedam, “Formation of SOI and Nondestructive Characterization Ion Implanted SOI Layers,” Appl. Phys. Lett. 51, 343 (1987).

    71. J. Narayan and K. Jagannadham, “Effect of free Surface and Interface on Thermal Annealing of Dislocation Loops in silicon,” J. Appl. Phys. 62, 1694 (1987).

    72. K. Jagannadham and J. Narayan, “The Elastic field Associated with a Square Loop in a Two Phase Medium,” J. Appl. Phys. 62, 1698 (1987).

    73. J. Narayan et al., “Microstructure and Properties of YBa2Cu3O7-d Superconductors with Transitions at 90 and near 290K,” Appl. Phys. Lett. 51, 914 (1987).

    74. J. Narayan et al., “Formation of superconducting Films by a Novel Laser processing Method,” Appl. Phys. Lett. 51, 1845 (1987).

    75. J. Narayan, “Microstructure and Properties of Novel high-Tc Superconductors,” J. of Metals, 41, 18 (1988).

    76. J. Narayan, A. R. Srivatsa, M. Peters, S. Yokota, and K. V. Ravi, “On Epitaxial Growth of Diamond Films on (100) silicon Substrates,” Appl. Phys. Lett. 53, 1823 (1988).

    77. R. K. Singh, K. Jagannadham, and J. Narayan, “Laser Surface Modification of Metal Coated Ceramics,” J. Mater. Res. 3, 1119 (1988).

    78. R. K. Singh and J. Narayan, “A Novel Method for Simulating Laser-Solid Interactions in Semiconductors and Layered Structures,” Mat. Sci. and Engr. B3, 217 (1989).

    79. J. Narayan and A. R. Srivatsa, “Mechanism of formation of <100> oriented Fivefold Crystallites in Diamond Films,” Appl. Phys. Lett. 59, 1659 (1989).

    80. K. Jagannadham and J. Narayan, “Mechanisms of Improvement in Fracture Strength in Laser-Surface Modified Ceramics,” J. Amer. Cer. Soc. 72, 1185 (1989).

    81. J. Krishnaswamy, A. Rengan, J. Narayan, K. Vedam and C. J. McHaurge, “Thin Film Deposition by a New Laser Ablation and Plasma hybrid Technique,” Appl. Phys. Lett. 54, 2455 (1989).

    82. K. Jagannadham and J. Narayan, “Modelling of Microstructural Features in Y-Ba-Cu-O Superconductors,” Phil Mag. A59, 917 (1989).

    83. A. S. Nandedkar and J. Narayan, “Atomic Structure of 60 and 90 Dislocations in Ge/Si Systems and Critical Phenomena,” Mat. Sci. and Engr. A113, 51 (1989).

    84. K. Jagannadham and J. Narayan, “Self-consistent Approach for critical Thickness during Three-dimensional Epitaxial Growth,” Mat. Sci. and Engr. A113, 65 91989).

    85. A. R. Srivatsa, S. Sharan, O. W. Holland, and J. Narayan, “Nature of Interfaces and Oxidation Processes in Ge+ Implanted Silicon,” J. Appl. Phys. 65, 4028 (1989).

    86. S. Sharan and J. Narayan, “Critical Thickness and Strain Relief Mechanisms in Semiconductor Heterostructures, J. Appl. Phys. 66, 2376 (1989).

    87. R. K. Singh, J. Narayan, A. K. Singh, and J. Krisnaswamy, “In-situ Processing High-Tc Superconducting Y-Ba-Cu-O Thin Films,” Appl. Phys. Lett. 54, 2271 (1989).

    88. J. Narayan, s. Sharan, and J. C. C. Fan, “Dislocation and Interfaces in Semiconductor Heterostructures,” J. of Metals 41, 10 (1989).

    89. R. K. Singh, L. Ganapathi, P. Tiwari and J. Narayan, “Effect of Processing Geometry in Oxygen Incorporation and In-situ Formation of YBa2Cu3O7 Superconducting Thin Films by Pulsed Laser Evaporation Technique,” Appl. Phys. Lett. 55, 2351 (1989).

    90. N. Biunno, J. Narayan, A. R. Srivatsa, and O. W. Holland, “Laser Deposition of Epitaxial TiN Films on (100) MgO,” Appl. Phys. Lett. 55, 405 (1989).

    91. R. K. Singh and J. Narayan, Pulsed Laser Evaporation Technique for Deposition of Thin Films: physics and Theoretical Model,” Phys. Rev. B41, 8843 (1990).

    92. R. K. Singh, O. W. Holland, and J. Narayan,  “Theoretical Model for Deposition of Thin films Using Pulsed Laser Evaporation Technique,” J. Appl. Phys. 68, 233 (1990).

    93. K. Jagannadham and J. Narayan, “Critical current Density and Atomic Structure of Grain Boundaries in High Tc Superconductors,” Phil. Mag. A61, 129 (1990).

    94. R. Singh, S. Sinha, N. J. Hsu, P. Chou, R. K. Singh, and J. Narayan, “Superconducting Thin Films of Y-Ba-Cu-O Prepared by Metal-Organic Chemical Vapor Deposition,” J. Appl. Phys. 1990, Vol. 67, pp. 1562-1565.

    95. R. Singh, R. P. S. Thakur, A. Kumar, P. Chou, and J. Narayan, “Role of In-Situ Rapid Isothermal Processing the Solid Phase Epitaxial Growth of II-A fluoride Films on InP,” Appl. Phys. Lett., 1990, Vol. 56, pp. 247-249, and 1990, Vol. 56, p. 1808.

    96. R. Singh, R. P. S. Thakur, A. Kumar, P. Chou, and J. Narayan, “Structural Properties of Solid Phase Epitaxial Films of BaF2 on (100) InP Formed by In-Situ Rapid Isothermal Processing,” J. Appl. Phys., Vol.67, 1990, pp. 6411-6414.

    97. J. Narayan, “Dislocations, twins, and grain Boundaries in CVD Diamond Thin Films,” J. Mater. Res. 15, 2414 (1990).

    98. R. K. Singh and J. Narayan, “Nature of Epitaxial Growth of high-Tc Laser Deposited Y-Ba-Cu-O Films on (100) SrTiO3 Substrates,” J. Appl. Phys. 67, 3658 (1990).

    99. R. K. Singh and J. Narayan, “ion Beam Analysis and Oxygen determination in High-Tc YBa2Cu3O7 superconducting Thin Films,” J. Mat. Res. 5, 1793 (1990)

    100. R. K. Singh, A. K. Singh, and J. Narayan, “In-Situ Patterned Laser Deposition of High Tc Y-Ba-Cu-O superconducting Thin Films,” J. Appl. Phys. 67, 3448 (1990).

    101. R. K. Singh, A. K. Singh, and J. Narayan, “Epitaxial Single Crystal Laser Deposition of Y-Ba-Cu-O Superconducting Thin Films on YS-ZrO2 Substrates at Low Processing Temperatures,” J. Appl. Phys. 67, 3452 (1990).

    102. Ashok Kumar, L. Ganapathi, and J. Narayan, “In-Situ Processing of Textured Thin Films of 110K in Bi(-Pb)-Ca-Sr-Cu-O by Excimer Laser Ablation,” Appl. Phys. Lett. 56, 2034 (1990).

    103. N. V. Nguyen, K. Vedam and J. Narayan, “Characterization of the Interface Between Ge+ Implanted Crystalline silicon and Thermally Grown Oxide by Spectroscopic Ellipsometry,” J. Appl. Phys. 67, 599 (1990).

    104. R. K. Singh, D. Bhattacharya and J. Narayan, “Sub-Surface Heating Effects During Pulsed Laser Evaporation of Materials,” Appl. Phys. Lett. 57, 2022 (1990).

    105. D. K. Christen, C. E. Klabunde, R. Feenstra, D. H. Lowdnes, D. P. Norton, J. D. Budai, H. R. Kerchner, J. R. Thompson, L. A. Boatner, J. Narayan, and R. Singh, “Transport Dissipation Effects in Y-Ba-Cu-O Thin Films,” Physica C 165-166, 1415 (1990).

    106. J. Narayan and A. S. Nandedkar, “Atomic Structure and Energy of Grain Boundaries in Silicon, Germanium and Diamond,” Phil. Mag. B63, 1181 (1991).

    107. J. Narayan, V. P. Godbole, and C. W. White, “Laser Method for Processing Continuous Diamond Thin Films,” Science 252, 416 (1991); Research News in Science 252, 375 (1991).

    108. J. Narayan and S. Sharan, “Mechanism of Formation of 60 and 90 dislocations in Semiconductor Heterostructures,” Materials Sci. and Engr., B10, 261 (1991).

    109. R. K. Singh, D. Bhattacharya and J. Narayan, “Improvement in Superconducting Properties of Silver Doped Y-Ba-Cu-O Thin Films,” Appl. Phys. Lett. 60, 255 (1992).

    110. K. Jagannadham and J. Narayan, “Depression of Order Parameter and Effect on Grain Boundary Critical Current Density,” Mat. Sci. and Engr., B14, 214 (1992).

    111. J. Narayan, V. P. Godbole, G. Matera, and R. K. Singh, “Enhancement of Nucleation and Adhesion of Diamond Films on Copper, Stainless Steel, and Silicon Substrates,” J. of Appl. Phys. 71 (2), 966 (1992).

    112. J. Narayan and X. Chen, “Laser Pattering of Diamond Films,” J. of Appl. Phys. 71 (8), 3795 (1992).

    113. V. P. Godbole and J. Narayan, “Synthesis of Diamond Films on Hastealloy,” J. Mater. Res. 7, 2785 (1992).

    114. J. Narayan, P. Tiwari, X. Chen, J. Singh, R. Chowdhury, and T. Zheleva, “Epitaxial Growth of TiN Films on (100) Silicon Substrates by Laser Physical Vapor Deposition,” Appl. Phys. Lett. 61, 1290 (1992).

    115. R. K. Singh, D. Bhattacharya, and J. Narayan, “Control of Surface Particle Density in Pulsed Laser Deposition of superconducting Y1Ba2Cu3O7 and Diamondlike Carbon Thin Films,” Appl. Phys. Lett. 61, 483 (1992).

    116. S. Pramanick and J. Narayan, “Effect of Processing Geometry on YBa2Cu3O7-x Plasma Emission During Superconducting Thin Film Growth of Pulsed Laser Evaporation Technique,” J. Appl. Phys. 73, 316 (1993).

    117. P. Tiwari, R. Singh, and J. Narayan, “Evaluation of Physical and Electrical Properties of CoSi2 Thin Films on (100) Si by Laser Physical Vapor Deposition,” Philosophical Mag. B68, 413 (1993).

    118. X. Chen and J. Narayan, “Effect of the Chemical Nature of Transition-Metal Substrates on Chemical Vapor Deposition of Diamond,” J. Appl. Phys. 74, 4168 (1993).

    119P. Tiwari, T. Zheleva, and J. Narayan, “Preparation of Pb(Zr0.54Ti0.46)O3 Thin Films on 9100) Si With Textured Y1Ba2Cu3O7 and YSZ Buffer Layers by LPVD,” Appl. Phys. Lett. 63, 30 (1993).

    120. J. Narayan, J. Reddy, N. Biunno, S. M. Kanetkar, P. Tiwari, and N. Parikh, “Ion Assisted Laser Processing of CNx Films,” Mat. Sci. and Engr. B26, 49 (1994).

    121. K. Jagannadham and J. Narayan, “ Invited Review - Microstructure and Properties of High-Temperature superconducting Materials,” Mat. Sci. and Engr. B26, 75 (1994).

    122. S. Bhargava, H. D. Bist, S. B. Samanta, A. V. Narlikar, A. Rengan, and J. Narayan, “Nanoclusters in Laser Ablated Diamondlike Films Through Scanning Tunneling Microscopy,” Solid State Comm. 90, 205 (1994).

    123. T. Zheleva, K. Jagannadham, and J. Narayan, “Epitaxial Growth in Large-Lattice-Mismatch Systems,” J. Appl. Phys. 75, 860 (1994).

    124. R. Chowdhury, X. Chen, and J. Narayan, “Pulsed Laser Deposition of Epitaxial Si/TiN/Si(100) Heterostructures,” Appl. Phys. Lett. 64 (10), 1236 (1994).

    125. J. Narayan, W. D. Fan, R. J. Narayan, P. Tiwari and H. H. Stadelmaier, “Diamond, Diamondlike and Titanium Nitride Biocompatible Coatings for Human Body Parts,” Mat. Sci. and Engr. B25, 5 (1994).

    126. J. Narayan, P. Tiwari, K. Jagannadham, and O. W. Holland, “Formation of Epitaxial and Textured Films on Ceramics - (100) MgO Single Crystals by Pulsed Laser Deposition,” Appl. Phys. Lett. 64, 2093 (1994).

    127. J. Narayan, R. Raghunathan, R. Chowdhury, and K. Jagannadham, “On the Mechanism of Combustion of Silicon Carbide,” J. Appl. Phys. 75, 7252 (1994).

    128. W. D. Fan, X. Chen, K. Jagganadham, and J. Narayan, “Diamond-ceramic Composite Tool Coatings,” J. Mat. Res. 9, 2850 (1994).

    129. M. O. Aboelfotoh, S. Oktyabrsky, and J. Narayan, “Microstructure Characterization of Cu3Ge/n-type GaAs Ohmic Contacts,” J. Appl. Phys. 76, 5760 (1994).

    130. R. D. Vispute, R. Chowdhury, P. Tiwari and J. Narayan, “Pulsed Laser Deposition and Characterization of Epitaxial Cu/TiN/Si(100) Heterostructures,” Appl. Phys. Lett. 65, 2565 (1994).

    131. R. K. Singh, S. Harkness, P. Tiwari, J. Narayan, C. Jahncke, and M. Paesler, “Existence of Superconductivity in Chain Disordered YBa2Cu3O7-d,” Phys. Rev. B51(14), 9155 (1995).

    132. S. Oktyabrsky, H. Wu, R. D. Vispute and J. Narayan, “Misfit Dislocations in Low-Temperature Grown Ge/Si Heterostructures,” Phil. Mag. A71, 537 (1995).

    133. M. Ichimura and J. Narayan, “Role of Surface Step on Misfit Dislocation Nucleation and Critical Thickness in Semiconductor Heterostructures,” Mat. Sci. and Engr. B31, 299 (1995).

    134. M. Ichimura and J. Narayan, “Negative Surface Energy in Semiconductor Heterostructures,” Phil. Mag. A72, 297 (1995).

    135. M. Ichimura and J. Narayan, “Atomic Study of Dislocation Nucleation in Ge/(001)Si Heterostructures,” Phil. Mag. A72, 281 (1995).

    136. S. Oktyabrsky and J. Narayan, “New Mechanism of Formation of Stacking Faults in Ge/(001)Si Heterostructures,” Phil. Mag. A72, 305 (1995).

    137. R. D. Vispute, Hong Wu and J. Narayan, “High Quality Aluminum Nitride Layers on Sapphire by Pulsed Laser Deposition,” Appl. Phys. Lett. 67, 1549 (1995).

    138. J. Narayan R. D. Vispute, and K. Jagannadham,” Interfacial Processing and Adhesion of Diamond, Diamondlike Carbon and TiN Films on Metallic and Polymeric Substrates,” J. Adhesion Sci. Technol. 9, 753 (1995).

    139. V. P. Godbole, K. Jagannadham, and J. Narayan, “Synthesis of Diamond Films on AIN Coated Nickel,” Appl. Phys. Lett. 67, 1322 (1995).

    140. M. Ichimura and J. Narayan, “Atomic Study of Partial Misfit dislocations in Ge/(001)Si Heterostructures,” Phil. Mag. A73, 767 (1996).

    141. V. P. Godbole and J. Narayan, “Aluminum Nitride Buffer Layer for Diamond Growth on Steels,” J. Mat. Res. 11(7), 1810 (1996).

    142. T. Zheleva, K. Jagannadham, R. D. Vispute, S. Oktyabrsky, and J. Narayan, “Characterization of Highly Oriented (110) TiN Films Grown on Epitaxial Ge/Si(001) Heterostructures,” J. Mat. Res. 11, 399 (1996).

    143. V. Weihnacht, W. D. Fan, K. Jagannadham, J. Narayan and C. T. Liu, “A New Design of Tungsten Carbide Tools with Diamond Coatings,” J. Mat. Res. 11, 2220 (1996).

    144. J. Narayan, H. Wu and R. D. Vispute, “Laser Processing of BN and AlN Films,” J. Elect. Mat. 25, 143 (1996).

    145. S. Oktyabrsky, M. O. Aboelfotoh, J. Narayan, and J. M. Woodall, “Cu3Ge Ohmic contacts to n-type GaAs,” J. Elect. Mat. 25, 1662 (1996).

    146. S. Oktyabrsky, M. O. Aboelfotoh, and J. Narayan, “Microstructure and Chemistry of Cu-Ge Ohmic Contact Layers to GaAs,” J. Elect. Mat. 25, 1673 (1996).

    147. K. Dovidenko, S. Oktyabrsky, J. Narayan, and M. Razeghi, “Epitaxial Aluminum Nitride Thin Films on Two Orientations of Sapphire,” J. Appl. Phys. 79, 2439 (1996).

    148. M. A. Borek, S. Oktyabrsky, M. O. Aboelfotoh, and J. Narayan, “Low Resistivity Copper Germanide on (100) Si contacts and Interconnections,” Appl. Phys. Lett. 69, 3560-3562 (1996).

    149. R. D. Vispute, J. Narayan, K. Dovidenko, K. Jagannadham, N. Parikh, A. Suvkhanov, J. D. Budai, “Heteroepitaxial Structures of SrTiO3/TiN on Si(100) by In-situ Pulsed Laser Deposition,” J. Appl. Phys. 80 (1996), No.12, p. 6720-6724.

    150. R. Chowdhury, R. D. Vispute, K. Jagannadham, and J. Narayan, “Cahracteristics of Titanium Nitride Films Grown by Pulsed Laser Deposition,” J. Mat. Res. 11 (1196), No.6, 1458-1469.

    151. K. Jagannadham, W. D. Fan, R. Komanduri, and J. Narayan, “Comparison of Diamond composite Coatings with Polycrystalline Diamond and Polycrystalline BN Layers on WC Tools,” J. Vac. Sci. and Technol. A15, 2262 (1997).

    152. M. O. Aboelfotoh, S. Oktyabrsky, J. Narayan, and J. M. Woodall, “Electrical and Microstructural Characteristics of Ge/Cu Ohmic Contacts to n-type GaAs,” J. Mat. Res. 12, 2325 (1997).

    153. A. K. Sharma and J. Narayan, “Synthesis and Processing of Superhard Carbon Nitride Solids (Invited Review),” International Materials Reviews 42, 137 (1997).

    154. S. R. Kalyanraman, R. D. Vispute, S. Oktyabrsky, K. Dovidenko, K. Jagannadham, and J. Narayan, “Influence of Oxygen Background Pressure on Crystallinity of SrTiO3 Films Grown on MgO by PLD,” Appl. Phys. Lett. 71, 1709 (1997).

    155. R. D. Vispute, J. Narayan, and J. D. Budai, “High-quality Optoelectric Grade Epitaxial AlN Films on a-Al2O3, Si and 6H-SiC by PLD,” Thin Solid Films 11, 171 (1997).

    156. M. Q. Ding, A. F. Myers, S. M. Campausen, J. Narayan, J. J. Cuomo, J. J. Hren, and J. Bruley, “Field Emission from Amorphous Diamond Coated Mo Tip Emitters by Pulsed Laser Deposition,” J. Vac. Sci. Technol. B15, 840 (1997).

    157. K. Dovidenko, S. Oktyabrsky, and J. Narayan, “Characteristics of Stacking Faults in AlN Thin Films,” J. Appl. Phys. 82, No.9, 4296-4299 (1997).

    158. J. Narayan, K. Dovidenko, A. Sharma, and S. Oktyabrsky, “Defects and Interfaces in Epitaxial ZnO/Al2O3 and AlN/ZnO/a-Al2O3 Heterostructures,” J. Appl. Phys. 84, 2597 (1998).

    159. K. Jagannadham, A. K. Sharma, Q. Wei, R. Kalyanraman, and J. Narayan, “Structural Characteristics of AlN Films by PLD and Magnetron sputtering: A Comparative Study,” J. Vac. Sci. Technol. A16(5), 2805 (1998).

160. M.O. Aboelfotoh, M.A. Borek, M.A., J. Narayan, Ohmic contact to P-type Gaas using Cu3Ge. Appl. Phys. Lett., 75, 3953 (1999). 

 161. A.K. Sharma, A. Kvit, J. Narayan, Growth of single crystal MgO on TiN/Si heterostructure by pulsed laser deposition.  J. Vacuum Sci. & Tech. A, 17, 3393(1999).

 

162. A.K. Sharma, J. Narayan, J.F. Muth, C.W. Teng, C. Jin, A. Kvit, R.M. Kolbas, O.W. Holland, Optical and structural properties of epitaxial MgxZn1-xO alloys.  Appl. Phys. Lett., 75, 3327 (1999).

 

163. Q, Wei, R.J. Narayan, A.K. Sharma, J. Sankar, J. Narayan, Preparation and mechanical properties of composite diamond-like carbon thin films.  J. of Vacuum Sci. & Tech. A, 17, 3406 (1999).  

164. Q. Wei, J. Sankar, A.D. Kelkar, J. Narayan, Microstructure evolution accompanying high temperature; uniaxial tensile creep of self-reinforced silicon nitride ceramics.  Mat. Sci. Engg. A, 272, 380 (1999).

 

165. Q. Wei, J. Sankar, A.D. Kelkar, J. Narayan.  Mechanical properties of diamond-like carbon composite thin films prepared by pulsed laser deposition.  Composites: Part B, Engineering, 30, 675 (1999).  

166. K. Dovidenko, S. Oktyabrsky, J. Narayan, M. Razeghi, Study of thin films polarity of group III nitrides.  MRS Internet J. of Nitride Semiconductor Res., 4S1 G6.46 (1999).

 

167. V.P. Godbole, R. Narayan, Z. Xu, J. Narayan, J. Sankar, Diamond films and composites on cobalt-chromium alloys. Mat. Sci. Engg. B, 58, 251 (1999).   

168. R. Kalyanaraman, S. Oktyabrsky, J. Narayan, The role of Ag in the pulsed laser growth of YBCO thin films.  J. of Appl. Phys., 85, 6636 (1999).   

169. S. Oktyabrsky, K. Dovidenko, A.K. Sharma, V, Joshkin, J. Narayan, Crystal structure and defects in nitrogen-deficient GaN.  MRS Internet J. of Nitride Semiconductor Res., 4S1 G6.46 (1999).

 

170. S. Oktyabrsky, K. Dovidenko, A.K. Sharma, J.  Narayan, V. Joshkin, Cubic GaN formation under nitrogen-deficient conditions.  Appl. Phys. Lett., 74, 2465 (1999).   

171. J.F. Muth, R.M. Kolbas, A.K. Sharma, S. Oktyabrsky, J. Narayan, Excitonic structure and adsorption coefficient measurements of ZnO single crystal epitaxial films deposited by pulsed laser deposition.  J. of Appl. Phys., 85, 7884 (1999).   

172. Y. Yamagata, A. Sharma, J. Narayan, R.M. Mayo, J.W. Newman, K. Ebihara, Optical emission study of ablation plasma plume in the preparation of diamond-like carbon films by KrF excimer laser.  J. of Appl. Phys., 86, 4154 (1999).   

173. M.O. Aboelfotoh, M.A. Borek, J. Narayan, Interaction of Cu and Cu3Ge thin films with Si1-xGex alloys.  Appl. Phys. Lett., 75, 1739 (1999).

 

174. K.M. Hassan, A.K. Sharma, J. Narayan, J.F. Muth, C.W. Teng, R.M. Kolbas, Optical and structural studies of Ge nanocrystals embedded in AlN matrix fabricated by pulsed laser deposition.  Appl. Phys. Lett., 75, 1222 (1999).

 

175. R.M. Mayo, J.W. Newman, A. Sharma, Y. Yamagata, J. Narayan, Electrostatice measurement of plasma plume characteristics in pulsed laser evaporated carbon.  J. of Appl. Phys., 86, 2865 (1999).

 

176. V.P. Godbole, K. Dovidenko, A.K. Sharma, J. Narayan, Thermal reactions and micro-structure of TiN-AlN layered nano-composites.  Mat. Sci. Engg. B, 68, 85 (1999).

 

177. A.K. Sharma, J. Narayan, C. Jin, A. Kvit, A, S. Chattopadhyay, C. Lee, Integration of Pb(Zr0.52Ti.0.48) O-3 epilayers with Si by domain epitaxy.  Appl. Phys. Lett., 76, 1458 (2000).   

178. M.O. Aboelfotoh, M.A. Borek,, J. Narayan, Microstructure and electrical resistivity of Cu and Cu3Ge thin films on Si1-xGex alloy layers,  J. of Appl. Phys.,  87, 365 (2000). 

179. C.W. Teng, J.F. Muth, U. Ozgur, M.J. Bergmann, H.O. Everitt, A.K. Sharma, C. Jin, J. Narayan, Refractive indices and adsorption coefficients of MgxZn1-xO alloys.  Appl. Phys. Lett., 76, 979 (2000).

 

180. Q. Wei, J. Sankar, A.K. Sharma, S. Oktyabrsky, J. Narayan, R.J. Narayan, Atomic structure, electrical properties, and infrared range optical properties of diamondlike carbon films containing foreign atoms prepared by pulsed laser deposition.  J. Mat. Res., 14, 633 (2000).   

181. S.C. Jain, M. Willander, J. Narayan, R. Van Overstraeten, III-nitrides: Growth, characterization, and properties.  J. of Appl. Phys., 87, 965 (2000).

 

182. C.W. Teng, J.F. Muth, R.M. Kolbas, K.M. Hassan, A.K. Sharma, A. Kvit, J. Narayan, Quantum confinement of E-1 and E-2 transitions in Ge quantum dots embedded in an Al203 or an AlN Matrix.  Appl. Phys. Lett., 76, 43 (2000).

 

183. H. Conrad, J. Narayan, On the grain size softening in nanocrystalline materials.  Scripta Materialia, 42, 1025 (2000).

 

184. A.K. Sharma, R.J. Narayan, J. Narayan, J. Kasichainula, Structural and tribological characteristics of diamond-like carbon films deposited by pulsed laser ablation.  Mat. Sci. Engg. B, 77, 139 (2000).

 

185. Y. Yamagata, A. Sharma, J. Narayan, R.M. Mayo, J.W. Newman, K. Ebihara, Comparative study of pulsed laser ablated plasma plumes from single crystal graphite and amorphous carbon target – part I optical emission spectroscopy.  J. Appl. Phys., 88, 6861 (2000). 

186. R.M. Mayo, J.W. Newman, Y. Yamagata, A. Sharma, J. Narayan, Comparative study of pulsed laser ablated plasma plumes from single crystal graphite and amorphous carbon targets – part II electrostatic probe measurements.  J. Appl. Phys., 88, 6868-6874 (2000) 

187. J. Narayan, Size and interface control of novel nanocrystalline materials using pulsed laser deposition.  J. Nanoparticle Research, 91, (2000). 

188. A.K. Sharma, J. Narayan, R.J. Narayan, K. Jagannadham, Structural and Tribological characteristics of diamondlike carbon films.  Mat. Sci. Engg. B, 77, 139 (2000).   

189. J. Narayan and Q. Wei, Superhard diamonlike carbon: preparation, theory and properties.  Int. Mat. Rev. (Invited), 45, 133 (2000). 


    100 Recent Publications in Archival Journals from Prof. Narayan’s Group
    1. Title: Raman Studies of GaN/sapphire thin film heterostructures

    Author(s): Hushur, A; Manghnani, MH; P; Narayan, J. 
    Source: JOURNAL OF APPLIED PHYSICS   Volume: 106  Issue: 5  Article Number: 054317 Published: 2009

    2. Title: Thin film epitaxy and structure property correlations for non-polar ZnO films  
    Author(s): Pant, P; Budai, JD; Aggarwal, R; Narayan, RJ; Narayan, J 
    Source: ACTA MATERIALIA   Volume: 57   Issue: 15   Pages: 4426-4431   Published: 2009
    3. Title: Formation of single and multiple deformation twins in nanocrystalline fcc metals  
    Author(s): Zhu, YT; Narayan, J; Hirth, JP; Mahajan, S; Wu, XL; Liao, XZ 
    Source: ACTA MATERIALIA   Volume: 57   Issue: 13   Pages: 3763-3770   Published: 2009
    4. Title: Twinning partial multiplication at grain boundary in nanocrystalline fcc metals  
    Author(s): Zhu, YT; Wu, XL; Liao, XZ, et al. 
    Source: APPLIED PHYSICS LETTERS   Volume: 95   Issue: 3   Article Number: 031909   Published: 2009
    5. Title: Defect mediated room temperature ferromagnetism in VO2 thin films  
    Author(s): Yang, TH; Nori, S; Zhou, H; and Narayan, J. 
    Source: APPLIED PHYSICS LETTERS   Volume: 95   Issue: 10   Article Number: 102506  Published: 2009
    6. Title: The synthesis and magnetic properties of a nanostructured Ni-MgO system  
    Author(s): Narayan, J; Nori, S; Ramachandran, S, et al. 
    Source: JOM   Volume: 61   Issue: 6   Pages: 76-81   Published: 2009
    7. Title: New frontier in thin film epitaxy and nanostructured materials  
    Author(s): Narayan, J 
    Source: INTERNATIONAL JOURNAL OF NANOTECHNOLOGY   Volume: 6   Issue: 5-6   Pages: 493-510   Published: 2009
    8. Title: Magnetic Properties of Self-Assembled Ni Nanoparticles in Two Dimensional Structures  
    Author(s): Gupta, A; Narayan, J; Kumar, D 
    Source: JOURNAL OF NANOSCIENCE AND NANOTECHNOLOGY   Volume: 9   Issue: 6   Pages: 3993-3996   Published: 2009
    9. Title: Structural characterization of two-step growth of epitaxial ZnO films on sapphire substrates at low temperatures  
    Author(s): Pant, P; Budai, JD; Aggarwal, R, et al. 
    Source: JOURNAL OF PHYSICS D-APPLIED PHYSICS   Volume: 42   Issue: 10   Article Number: 105409   Published: 2009
    10. Title: Magnetic properties and their dependence on deposition parameters of Co/Al2O3 multilayers grown by pulsed laser deposition  
    Author(s): Aggarwal, R; Nori, S; Jin, CM, et al. 
    Source: ACTA MATERIALIA   Volume: 57   Issue: 6   Pages: 2040-2046   Published: 2009
    11. Title: MoOx modified ZnGaO based transparent conducting oxides  
    Author(s): Dutta, T; Gupta, P; Bhosle, V, et al. 
    Source: JOURNAL OF APPLIED PHYSICS   Volume: 105   Issue: 5   Article Number: 053704   Published: 2009
    12. Title: Plasma plume dynamics in magnetically assisted pulsed laser deposition  
    Author(s): Haverkamp, JD; Bourham, MA; Du, S, et al. 
    Source: JOURNAL OF PHYSICS D-APPLIED PHYSICS   Volume: 42   Issue: 2   Article Number: 025201   Published: 2009
    13. Title: Growth of biepitaxial zinc oxide thin films on silicon (100) using yttria-stabilized zirconia buffer layer  
    Author(s): Aggarwal, R; Jin, CM; Pant, P, et al. 
    Source: APPLIED PHYSICS LETTERS   Volume: 93   Issue: 25   Article Number: 251905   Published: 2008
    14. Title: Self-thickening, cross-slip deformation twinning model  
    Author(s): Narayan, J; Zhu, YT. 
    Source: APPLIED PHYSICS LETTERS   Volume: 92   Issue: 15   Article Number: 151908   Published: 2008
    15. Title: Comparative Raman and HRTEM Study of Nanostructured GaN Nucleation Layers and Device Layers on Sapphire (0001)  
    Author(s): Pant, P; Narayan, J; Wushuer, A, et al. 
    Source: JOURNAL OF NANOSCIENCE AND NANOTECHNOLOGY   Volume: 8   Issue: 11   Pages: 5985-5992   Published: 2008
    16. Title: Defect dependent ferromagnetism in MgO doped with Ni and Co  
    Author(s): Narayan, J; Nori, S; Pandya, DK, et al. 
    Source: APPLIED PHYSICS LETTERS   Volume: 93   Issue: 8   Article Number: 082507   Published: 2008
    17. Title: Observation of room temperature ferromagnetism in Ga : ZnO: A transition metal free transparent ferromagnetic conductor  
    Author(s): Bhosle, V; Narayan, J 
    Source: APPLIED PHYSICS LETTERS   Volume: 93   Issue: 2   Article Number: 021912   Published: 2008
    18. Title: Deformation twin formed by self-thickening, cross-slip mechanism in nanocrystalline Ni  
    Author(s): Wu, XL; Narayan, J; Zhu, YT 
    Source: APPLIED PHYSICS LETTERS   Volume: 93   Issue: 3   Article Number: 031910   Published: 2008
    19. Title: Plasma instabilities in magnetically assisted pulsed laser deposition  
    Author(s): Haverkamp, JD; Bourham, MA; Du, S, et al. 
    Source: JOURNAL OF PHYSICS D-APPLIED PHYSICS   Volume: 41   Issue: 11   Article Number: 115206   Published: 2008
    20. Title: Structure-magnetic property correlations in the epitaxial FePt system  
    Author(s): Trichy, GR; Chakraborti, D; Narayan, J, et al. 
    Source: APPLIED PHYSICS LETTERS   Volume: 92   Issue: 10   Article Number: 102504   Published: 2008
    21. Title: Magnetic properties of epitaxial oxide heterostructures  
    Author(s): Ramachandran, S; Prater, JT; Sudhakar, N, et al. 
    Source: SOLID STATE COMMUNICATIONS   Volume: 145   Issue: 1-2   Pages: 18-22   Published: 2008
    22. Title: Effect of Al doping on the magnetic and electrical properties of Zn(Cu)O based diluted magnetic semiconductors  
    Author(s): Chakraborti, D; Trichy, G; Narayan, J, et al. 
    Source: JOURNAL OF APPLIED PHYSICS   Volume: 102   Issue: 11   Article Number: 113908   Published: 2007
    23. Title: The effect of oxygen annealing on ZnO : Cu and ZnO :(Cu,Al) diluted magnetic semiconductors  
    Author(s): Chakraborti, D; Trichy, GR; Prater, JT, et al. 
    Source: JOURNAL OF PHYSICS D-APPLIED PHYSICS   Volume: 40   Issue: 24   Pages: 7606-7613   Published: 2007
    24. Title: High-kappa gate dielectrics with ultra-low leakage current for sub-45 nm CMOS  
    Author(s): Venkateshan, A; Singh, R; Poole, KF, et al. 
    Source: ELECTRONICS LETTERS   Volume: 43   Pages: 1130-1132   Published: 2007
    25. Title: Nanostructured GaN nucleation layer for light-emitting diodes  
    Author(s): Narayan, J; Pant, P; Wei, W, et al. 
    Source: JOURNAL OF NANOSCIENCE AND NANOTECHNOLOGY   Volume: 7   Issue: 8   Pages: 2719-2725   Published: AUG 2007
    26. Title: Growth, characterization, and magnetic properties of FePt nanodots on Si (100)  
    Author(s): Trichy, GR; Chakraborti, D; Narayan, J, et al. 
    Source: JOURNAL OF APPLIED PHYSICS   Volume: 102   Issue: 3   Article Number: 033901   Published: AUG 1 2007
    27. Title: Gallium-doped zinc oxide films as transparent electrodes for organic solar cell applications  
    Author(s): Bhosle, V; Prater, JT; Yang, F, et al. 
    Source: JOURNAL OF APPLIED PHYSICS   Volume: 102   Issue: 2   Article Number: 023501   Published: JUL 15 2007
    28. Title: Anisotropic magnetic properties in [110] oriented epitaxial La0.7Sr0.3MnO3 films on (0001) sapphire  
    Author(s): Bhosle, V; Prater, JT; Narayan, J 
    Source: JOURNAL OF APPLIED PHYSICS   Volume: 102   Issue: 1   Article Number: 013527   Published: JUL 1 2007
    29. Title: Room temperature ferromagnetism and magnetotransport properties of the layered manganite system La1.2Ba1.8Mn2-xRuxO7 (0 <= x <= 1-0)  
    Author(s): Sudhakar, N; Rajeev, KP; Tiwari, A, et al. 
    Source: SOLID STATE COMMUNICATIONS   Volume: 142   Issue: 9   Pages: 519-524   Published: JUN 2007
    30. Title: Structural, magnetic, and electron transport studies on nanocrystalline layered manganite La1.2Ba1.8Mn2O7 system  
    Author(s): Sudhakar, N; Ningthoujam, RS; Rajeev, KP; Gajbhiye, NS; Narayan, J 
    Source: JOURNAL OF NANOSCIENCE AND NANOTECHNOLOGY   Volume: 7   Issue: 3   Pages: 965-969   Published: 2007
    31. Title: Magnetic properties of Ni-doped MgO diluted magnetic insulators  
    Author(s): Ramachandran, S; Narayan, J; Prater, JT 
    Source: APPLIED PHYSICS LETTERS   Volume: 90   Issue: 13   Article Number: 132511   Published: MAR 26 2007
    32. Title: Epitaxial growth and magnetic properties of La0.7Sr0.3MnO3 films on (0001) sapphire  
    Author(s): Bhosle, V; Narayan, J 
    Source: APPLIED PHYSICS LETTERS   Volume: 90   Issue: 10   Article Number: 101903   Published: MAR 5 2007
    33. Title: Magnetic, electrical, and microstructural characterization of ZnO thin films codoped with Co and Cu  
    Author(s): Chakraborti, D; Ramachandran, S; Trichy, G, et al. 
    Source: JOURNAL OF APPLIED PHYSICS   Volume: 101   Issue: 5   Article Number: 053918   Published: MAR 1 2007
    34. Title: Room temperature ferromagnetism in Zn1-xCuxO thin films  
    Author(s): Chakraborti, D; Narayan, J; Prater, JT 
    Source: APPLIED PHYSICS LETTERS   Volume: 90   Issue: 6   Article Number: 062504   Published: FEB 5 2007
    35. Title: Photoluminescence study of ZnO films codoped with nitrogen and tellurium  
    Author(s): Porter, HL; Muth, JF; Narayan, J, et al. 
    Source: JOURNAL OF APPLIED PHYSICS   Volume: 100   Issue: 12   Article Number: 123102   Published: DEC 15 2006
    36. Title: Transmission electron microscopy observations on the microstructure of naturally aged Al-Mg-Si alloy AA6022 processed with an electric field  
    Author(s): Conrad, H; Ramachandran, S; Jung, K; Narayan, J

    Source: JOURNAL OF MATERIALS SCIENCE   Volume: 41   Issue: 22   Pages: 7555-7561 Published: NOV 2006

    37. Title: Phase transition and critical issues in structure-property correlations of vanadium oxide  
    Author(s): Narayan, J; Bhosle, VM 
    Source: JOURNAL OF APPLIED PHYSICS   Volume: 100   Issue: 10   Article Number: 103524   Published: NOV 15 2006
    38. Title: Regular and high resolution transmission electron microscopy observations on the precipitates in a naturally aged Al-Mg-Si alloy AA6022  
    Author(s): Ramachandran, S; Jung, K; Narayan, J, et al. 
    Source: MATERIALS SCIENCE AND ENGINEERING A-STRUCTURAL MATERIALS PROPERTIES MICROSTRUCTURE AND PROCESSING   Volume: 435   Pages: 693-697   Published: NOV 5 2006
    39. Title: Microstructure and electrical property correlations in Ga : ZnO transparent conducting thin films  
    Author(s): Bhosle, V; Narayan, J 
    Source: JOURNAL OF APPLIED PHYSICS   Volume: 100   Issue: 9   Article Number: 093519   Published: NOV 1 2006
    40. Title: Self-assembled magnetic nanostructures: Epitaxial Ni nanodots on TiN/Si (001) surface  
    Author(s): Zhou, H; Narayan, J 
    Source: JOURNAL OF NANOPARTICLE RESEARCH   Volume: 8   Issue: 5   Pages: 595-600   Published: OCT 2006
    41. Title: Methods for processing tantalum films of controlled microstructures and properties  
    Author(s): Narayan, J; Bhosle, V; Tiwari, A, et al. 
    Source: JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A   Volume: 24   Issue: 5   Pages: 1948-1954   Published: SEP-OCT 2006
    42. Title: L1(0) ordered epitaxial FePt (001) thin films on TiN/Si (100) by pulsed laser deposition  
    Author(s): Trichy, GR; Narayan, J; Zhou, H 
    Source: APPLIED PHYSICS LETTERS   Volume: 89   Issue: 13   Article Number: 132502   Published: SEP 25 2006
    43. Title: Electrical properties of transparent and conducting Ga doped ZnO  
    Author(s): Bhosle, V; Tiwari, A; Narayan, J 
    Source: JOURNAL OF APPLIED PHYSICS   Volume: 100   Issue: 3   Article Number: 033713   Published: AUG 1 2006
    44. Title: Critical size for defects in nanostructured materials  
    Author(s): Narayan, J 
    Source: JOURNAL OF APPLIED PHYSICS   Volume: 100   Issue: 3   Article Number: 034309   Published: AUG 1 2006
    45. Title: Effect of oxygen annealing on Mn doped ZnO diluted magnetic semiconductors  
    Author(s): Ramachandran, S; Narayan, J; Prater, JT 
    Source: APPLIED PHYSICS LETTERS   Volume: 88   Issue: 24   Article Number: 242503   Published: JUN 12 2006
    46. Title: Epitaxial ZnO/Pt layered structures and ZnO-Pt nanodot composites on sapphire (0001)  
    Author(s): Chugh, A; Ramachandran, S; Tiwari, A, et al. 
    Source: JOURNAL OF ELECTRONIC MATERIALS   Volume: 35   Issue: 5   Pages: 840-845   Published: 2006
    47. Title: Co-doped ZnO dilute magnetic semiconductor  
    Author(s): Prater, JT; Ramachandran, S; Tiwari, A; Narayan, J 
    Source: JOURNAL OF ELECTRONIC MATERIALS   Volume: 35   Issue: 5   Pages: 852-856  Published: 2006
    48. Title: Growth of highly conducting epitaxial ZnO-Pt-ZnO heterostructure on alpha-Al2O3 (0001)  
    Author(s): Ramachandran, S; Chugh, A; Tiwari, A, et al. 
    Source: JOURNAL OF CRYSTAL GROWTH   Volume: 291   Issue: 1   Pages: 212-217   Published: MAY 15 2006
    49. Title: Hyperbaric laser chemical vapor deposition of carbon fibers from the 1-alkenes, 1-alkynes, and benzene  
    Author(s): Maxwell, JL; Boman, M; Springer, RW, et al. 
    Source: JOURNAL OF THE AMERICAN CHEMICAL SOCIETY   Volume: 128   Issue: 13   Pages: 4405-4413   Published: APR 5 2006
    50. Title: Ferromagnetism in Co doped CeO2: Observation of a giant magnetic moment with a high Curie temperature  
    Author(s): Tiwari, A; Bhosle, VM; Ramachandran, S, et al. 
    Source: APPLIED PHYSICS LETTERS   Volume: 88   Issue: 14   Article Number: 142511   Published: APR 3 2006
    51. Title: Growth and observation of low-field giant magnetoresistance in La0.7Sr0.3MnO3/ZnO superlattice structures  
    Author(s): Tiwari, A; Narayan, J 
    Source: JOURNAL OF NANOSCIENCE AND NANOTECHNOLOGY   Volume: 6   Issue: 3   Pages: 612-617   Published: MAR 2006
    52. Title: Characteristics of nucleation layer and epitaxy in GaN/sapphire heterostructures  
    Author(s): Narayan, J; Pant, P; Chugh, A, et al. 
    Source: JOURNAL OF APPLIED PHYSICS   Volume: 99   Issue: 5   Article Number: 054313   Published: MAR 1 2006
    53. Title: Metallic conductivity and metal-semiconductor transition in Ga-doped ZnO  
    Author(s): Bhosle, V; Tiwari, A; Narayan, J 
    Source: APPLIED PHYSICS LETTERS   Volume: 88   Issue: 3   Article Number: 032106   Published: JAN 16 2006
    54. Title: Grain size softening in nanocrystalline TiN  
    Author(s): Conrad, H; Narayan, J; Jung, K 
    Source: INTERNATIONAL JOURNAL OF REFRACTORY METALS & HARD MATERIALS  Volume: 23   Issue: 4-6   Pages: 301-305   Published: 2005
    55. Title: Epitaxial growth and properties of Zn1-xVxO diluted magnetic semiconductor thin films  
    Author(s): Ramachandran, S; Tiwari, A; Narayan, J, et al. 
    Source: APPLIED PHYSICS LETTERS   Volume: 87   Issue: 17   Article Number: 172502   Published: OCT 24 2005
    56. Title: Enhanced photoconductivity of ZnO films Co-doped with nitrogen and tellurium  
    Author(s): Porter, HL; Cai, AL; Muth, JF, et al. 
    Source: APPLIED PHYSICS LETTERS   Volume: 86   Article Number: 211918   Published: 2005
    57. Title: Epitaxial growth and properties of MoOx(2 < x < 2.75) films  
    Author(s): Bhosle, V; Tiwari, A; Narayan, J 
    Source: JOURNAL OF APPLIED PHYSICS   Volume: 97   Issue: 8   Article Number: 083539   Published: APR 15 2005
    58. Title: Epitaxial growth of zinc oxide thin films on silicon  
    Author(s): Jin, CM; Narayan, R; Tiwari, A, et al. 
    Source: MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY   Volume: 117   Issue: 3   Pages: 348-354   Published: MAR 25 2005
    59. Title: Electrical transport in ZnO(1-delta)films: Transition from band-gap insulator to Anderson localized insulator (vol 96, pg 3827, 2004)  
    Author(s): Tiwari, A; Jin, C; Narayan, J, et al. 
    Source: JOURNAL OF APPLIED PHYSICS   Volume: 97   Issue: 5   Article Number: 059902  Published: MAR 1 2005
    60. Title: Effect of UV/VUV enhanced RTP on process variation and device performance of metal gate high-kappa gate stacks for the sub-90-nm CMOS regime  
    Author(s): Damjanovic, D; Bolla, HK; Singh, R, et al. 
    Source: IEEE TRANSACTIONS ON SEMICONDUCTOR MANUFACTURING   Volume: 18   Issue: 1   Pages: 55-62   Published: FEB 2005
    61. Title: New frontiers in thin film growth and nanomaterials  
    Author(s): Narayan, J 
    Source: METALLURGICAL AND MATERIALS TRANSACTIONS B-PROCESS METALLURGY AND MATERIALS PROCESSING SCIENCE   Volume: 36   Issue: 1   Pages: 5-22   Published: 2005
    62. Title: New frontiers in thin film growth and nanomaterials  
    Author(s): Narayan, J 
    Source: METALLURGICAL AND MATERIALS TRANSACTIONS A-PHYSICAL METALLURGY AND MATERIALS SCIENCE   Volume: 36A   Issue: 2   Pages: 277-294   Published: FEB 2005
    63. Title: Pulsed laser deposition assisted novel synthesis of self-assembled magnetic nanoparticles  
    Author(s): Kumar, D; Yarmolenko, S; Sarkar, J, et al. 
    Source: COMPOSITES PART B-ENGINEERING   Volume: 35   Issue: 2   Pages: 149-155   Published: 2004
    64. Title: The effect of interfacial layers on high-performance gate dielectrics processed by RTP-ALD  
    Author(s): Fakhruddin, M; Singh, R; Poole, KF, Narayan, J. 
    Source: JOURNAL OF THE ELECTROCHEMICAL SOCIETY   Volume: 151   Issue: 8   Pages: G507-G511   Published: 2004
    65. Title: Growth of single-phase c-axis aligned La1.2Ca1.8Mn2O7 films on SrTiO3(001)  
    Author(s): Tiwari, A; Narayan, J; Sudhakar, N, et al. 
    Source: SOLID STATE COMMUNICATIONS   Volume: 132   Issue: 12   Pages: 863-866   Published: DEC 2004
    66. Title: Origin of room-temperature ferromagnetism in cobalt-doped ZnO  
    Author(s): Ramachandran, S; Tiwari, A; Narayan, J 
    Source: JOURNAL OF ELECTRONIC MATERIALS   Volume: 33   Issue: 11   Pages: 1298-1302   Published: 2004
    67. Title: Electrical transport in ZnO1-delta films: Transition from band-gap insulator to Anderson localized insulator  
    Author(s): Tiwari, A; Jin, C; Narayan, J, et al. 
    Source: JOURNAL OF APPLIED PHYSICS   Volume: 96   Issue: 7   Pages: 3827-3830   Published: OCT 1 2004
    68. Title: Novel methods of forming self-assembled nanostructured materials: Ni nanodots in Al2O3 and TiN matrices  
    Author(s): Narayan, J; Tiwari, A 
    Source: JOURNAL OF NANOSCIENCE AND NANOTECHNOLOGY   Volume: 4   Issue: 7   Pages: 726-732   Published: SEP 2004
     
    69. Title: Epitaxial GaN on Si(111): Process control of SiNx interlayer formation  
    Author(s): Rawdanowicz, TA; Narayan, J 
    Source: APPLIED PHYSICS LETTERS   Volume: 85   Issue: 1   Pages: 133-135   Published: JUL 5 2004
    70. Title: Zn0.9Co0.1O-based diluted magnetic semiconducting thin films  
    Author(s): Ramachandran, S; Tiwari, A; Narayan, J 
    Source: APPLIED PHYSICS LETTERS   Volume: 84   Issue: 25   Pages: 5255-5257   Published: JUN 21 2004
    71. Title: TaN-TiN binary alloys and superlattices as diffusion barriers for copper interconnections (vol 33, pg 1, 2004)  
    Author(s): Wang, H; Gupta, A; Tiwari, A, et al. 
    Source: JOURNAL OF ELECTRONIC MATERIALS   Volume: 33   Issue: 1   Pages: L5-L5   Published: JAN 2004
    72. Title: Role of self-assembled gold nanodots in improving the electrical and optical characteristics of zinc oxide films  
    Author(s): Tiwari, A; Chugh, A; Jin, C, et al. 
    Source: JOURNAL OF NANOSCIENCE AND NANOTECHNOLOGY   Volume: 3   Issue: 5   Pages: 368-371   Published: OCT 2003
    73. Title: TaN-TiN binary alloys and superlattices as diffusion barriers for copper interconnects  
    Author(s): Wang, H; Gupta, A; Tiwari, A, et al. 
    Source: JOURNAL OF ELECTRONIC MATERIALS   Volume: 32   Issue: 10   Pages: 994-999   Published: 2003
    74. Title: Formation of self-assembled epitaxial nickel nanostructures  
    Author(s): Zhou, H; Kumar, D; Kvit, A, et al. 
    Source: JOURNAL OF APPLIED PHYSICS   Volume: 94   Issue: 8   Pages: 4841-4846   Published: OCT 15 2003
    75. Title: Growth and characteristics of TaN/TiN superlattice structures  
    Author(s): Wang, H; Zhang, X; Gupta, A, et al. 
    Source: APPLIED PHYSICS LETTERS   Volume: 83   Issue: 15   Pages: 3072-3074   Published: OCT 13 2003
    76. Title: Synthesis of bulk nanostructured Zn by combinations of cryomilling and powder consolidation by room temperature milling: optimizing mechanical properties  
    Author(s): Zhu, XK; Zhang, X; Wang, H, et al. 
    Source: SCRIPTA MATERIALIA   Volume: 49   Issue: 5   Pages: 429-433   Published: SEP 2003
    77. Title: A novel technique for making self-encapsulated and self-aligned copper films  
    Author(s): Chugh, A; Tiwari, A; Kvit, A, et al. 
    Source: MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY   Volume: 103   Issue: 1   Pages: 45-48   Published: SEP 25 2003
    78. Title: Rectifying electrical characteristics of La0.7Sr0.3MnO3/ZnO heterostructure  
    Author(s): Tiwari, A; Jin, C; Kumar, D, et al. 
    Source: APPLIED PHYSICS LETTERS   Volume: 83   Issue: 9   Pages: 1773-1775   Published: SEP 1 2003
    79. Title: Effect of microstructure on diffusion of copper in TiN films  
    Author(s): Gupta, A; Wang, H; Kvit, A, et al. 
    Source: JOURNAL OF APPLIED PHYSICS   Volume: 93   Issue: 9   Pages: 5210-5214   Published: MAY 1 2003
    80. Title: Role of silver addition in the synthesis of high critical current density MgB2 bulk superconductors  
    Author(s): Kumar, D; Pennycook, SJ; Narayan, J, et al. 
    Source: SUPERCONDUCTOR SCIENCE & TECHNOLOGY   Volume: 16   Issue: 4   Pages: 455-458   Published: APR 2003
    81. Title: Plasma plume characteristics and properties of pulsed laser deposited diamond-like carbon films  
    Author(s): Haverkamp, J; Mayo, RM; Bourham, MA, et al. 
    Source: JOURNAL OF APPLIED PHYSICS   Volume: 93   Issue: 6   Pages: 3627-3634   Published: MAR 15 2003
    82. Title: Evolution of microstructure and mechanical properties of in situ consolidated bulk ultra-fine-grained and nanocrystalline Zn prepared by ball milling  
    Author(s): Zhang, X; Wang, H; Scattergood, RO, et al. 
    Source: MATERIALS SCIENCE AND ENGINEERING A-STRUCTURAL MATERIALS PROPERTIES MICROSTRUCTURE AND PROCESSING   Volume: 344   Issue: 1-2   Pages: 175-181   Published: MAR 15 2003
    83. Title: Growth, characterization,, and electrical properties of PbZr0.52Ti0.48O3 thin films on buffered silicon substrates using pulsed laser deposition  
    Author(s): Gilmore, WM; Chattopadhyay, S; Kvit, A, et al. 
    Source: JOURNAL OF MATERIALS RESEARCH   Volume: 18   Issue: 1   Pages: 111-114   Published: JAN 2003
    84. Title: Domain epitaxy: A unified paradigm for thin film growth  
    Author(s): Narayan, J; Larson, BC 
    Source: JOURNAL OF APPLIED PHYSICS   Volume: 93   Issue: 1   Pages: 278-285   Published: JAN 1 2003
    85. Title: Novel cubic ZnxMg1-xO epitaxial hetero structures on Si (100) substrates  
    Author(s): Narayan, J; Sharma, AK; Kvit, A, et al. 
    Source: SOLID STATE COMMUNICATIONS   Volume: 121   Issue: 1   Pages: 9-13   Published: 2002
    86. Title: Low temperature electrical transport in La1-xNdxNiO3-delta  
    Author(s): Tiwari, A; Rajeev, KP; Narayan, J 
    Source: SOLID STATE COMMUNICATIONS   Volume: 121   Issue: 6-7   Pages: 357-361   Published: 2002
    87. Title: Structural, optical and magnetic properties of diluted magnetic semiconducting Zn1-xMnxO films  
    Author(s): Tiwari, A; Jin, C; Kvit, A, et al. 
    Source: SOLID STATE COMMUNICATIONS   Volume: 121   Issue: 6-7   Pages: 371-374   Published: 2002
    88. Title: Integration of single crystal La0.7Sr0.3MnO3 films with Si(001)  
    Author(s): Tiwari, A; Chug, A; Jin, C, et al. 
    Source: SOLID STATE COMMUNICATIONS   Volume: 121   Issue: 12   Pages: 679-682   Published: 2002
    89. Title: Weak-localization effect in single crystal TaN(001) films  
    Author(s): Tiwari, A; Wang, H; Kumar, D, et al. 
    Source: MODERN PHYSICS LETTERS B   Volume: 16   Issue: 28-29   Pages: 1143-1149   Published: DEC 20 2002
    90. Title: Formation of misfit dislocations in thin film heterostructures  
    Author(s): Narayan, J; Oktyabrsky, S 
    Source: JOURNAL OF APPLIED PHYSICS   Volume: 92   Issue: 12   Pages: 7122-7127   Published: DEC 15 2002
    91. Title: Mechanisms for grain size hardening and softening in Zn  
    Author(s): Conrad, H; Narayan, J 
    Source: ACTA MATERIALIA   Volume: 50   Issue: 20   Pages: 5067-5078   Published: DEC 3 2002
    92. Title: Synthesis and atomic-level characterization of Ni nanoparticles in Al2O3 matrix  
    Author(s): Kumar, D; Pennycook, SJ; Lupini, A, et al. 
    Source: APPLIED PHYSICS LETTERS   Volume: 81   Issue: 22   Pages: 4204-4206  Published:2002
    93. Title: Formation of epitaxial Au/Ni/Au ohmic contacts to p-GaN  
    Author(s): Narayan, J; Wang, H; Oh, TH, et al. 
    Source: APPLIED PHYSICS LETTERS   Volume: 81   Issue: 21   Pages: 3978-3980   Published: NOV 18 2002
    94. Title: Studies of deformation mechanisms in ultra-fine-grained and nanostructured Zn  
    Author(s): Zhang, X; Wang, H; Scattergood, RO, et al. 
    Source: ACTA MATERIALIA   Volume: 50   Issue: 19   Pages: 4823-4830   Published: NOV 14 2002
    95. Title: Epitaxial growth of ZnO films on si(111)  
    Author(s): Tiwari, A; Park, M; Jin, C, et al. 
    Source: JOURNAL OF MATERIALS RESEARCH   Volume: 17   Issue: 10   Pages: 2480-2483   Published: OCT 2002
    96. Title: Z-contrast imaging of dislocation cores at the GaAs/Si interface  
    Author(s): Lopatin, S; Pennycook, SJ; Narayan, J, et al. 
    Source: APPLIED PHYSICS LETTERS   Volume: 81   Issue: 15   Pages: 2728-2730   Published: OCT 7 2002
    97. Title: Modulated oscillatory hardening and dynamic recrystallization in cryomilled nanocrystalline Zn  
    Author(s): Zhang, X; Wang, H; Scattergood, RO, et al. 
    Source: ACTA MATERIALIA   Volume: 50   Issue: 16   Pages: 3995-4004   Published: SEP 20 2002
    98. Title: Mechanism for grain size softening in nanocrystalline Zn  
    Author(s): Conrad, H; Narayan, J 
    Source: APPLIED PHYSICS LETTERS   Volume: 81   Issue: 12   Pages: 2241-2243   Published: SEP 16 2002
    99. Title: Copper diffusion characteristics in single-crystal and polycrystalline TaN  
    Author(s): Wang, H; Tiwari, A; Zhang, X, et al. 
    Source: APPLIED PHYSICS LETTERS   Volume: 81   Issue: 8   Pages: 1453-1455   Published: AUG 19 2002
    100. Title: Mechanical properties of cyromilled nanocrystalline Zn studied by the miniaturized disk bend test  
    Author(s): Zhang, X; Wang, H; Scattergood, RO, et al. 
    Source: ACTA MATERIALIA   Volume: 50   Issue: 13   Pages: 3527-3533   Published: AUG 1 2002
     
 
 
 
 
 
 

Summary of Narayan’s Research Contributions (with Most Cited Papers Below) 

  1. Defects and diffusion in magnesium Oxide ( Most Cited #52 and 59; Narayan & Washburn, Acta Met 21, 533(1973); Phil Mag 26, 1179(1972))
 

Narayan Provided first direct evidence for the presence of paired vacancies (Schottky defects) and paired interstitials (Frenkel defects) and their clusters in magnesium oxide. This research was quite groundbreaking in the field of ionic solids and ceramics, especially in the context of  seminal work on the presence of vacancies in metals by Simmons and Balluffi. Through his ingenious in-situ TEM experiments, Narayan studied diffusion mechanisms of Schottky and Frenkel defects and showed activation energy for diffusion along the dislocations and grain boundaries (pipe diffusion) to be approximately half of the bulk value. This work has proved to be pivotal to processing of materials, particularly, ceramics and semiconductors.

 

  1. Ion-solid interactions (Ion Implantation), solid-phase epitaxy, and formation of novel supersaturated semiconductor alloys (Most Cited #  9, 12, 14, , 23, 26, 28, 29, see attachment below)
 

Narayan’s expertise in defects and diffusion was ideally suited for the next phase of his career at ORNL on ion implantation, solid phase epitaxy, rapid thermal annealing, and formation of supersaturated semiconductor alloys. He has made outstanding contributions in each of these areas; he established atomic structure of displacement cascades and developed an amorphization model for semiconductors based upon his careful experiments which led to the determination of critical damage energy for amorphization (12eV/atom for silicon). He performed elegant TEM experiments on solid-phase-epitaxy kinetics, and discovered the formation of supersaturated semiconductor alloys with solubility limits exceeding as much as 500 over the equilibrium values. This is a critical step in ion implantation doping for ultra-shallow p-n junctions in current and future devices. Narayan established amorphization in silicon to be the first-order phase transformation with a break in entropy, and proposed a well-known crystallization model to explain orientation dependence of crystallization kinetics and twin defect nucleation. 

  1. Pulsed laser annealing and rapid thermal processing of semiconductors (Most Cited # 3, 11, 14, 27, 29, 34, 39, 46; US Patents: # 4,147,563(1979); 4,181,538(1980); 4,261,764(1981))
 

Narayan and his coworkers at ORNL discovered pulsed laser annealing to remove ion implantation damage and related defects in ion implanted silicon, and created “defect-free” supersaturated semiconductor alloys by nonequilibrium melting and quenching with rates exceeding billions of degrees per second. He performed seminal experiments on interfacial instability and cell formation under controlled rapid quenching conditions. Narayan invented laser induced diffusion to form highly efficient ultra-shallow p-n junctions and low-cost laser-diffused solar cells. This technique is being adopted currently to form next-generation ultra-dense microelectronic devices with feature size less than 50nm. Subsequent research in laser (transient thermal) processing resulted in the discovery of flame annealing and rapid thermal processing, which constitutes the backbone of current device fabrication.   

  1. Pulsed laser evaporation and deposition of thin films (Most Cited # 1, 4, 5, 6, , 13, 16, 18, 20, 21,, 22, 30; US Patents:  # 5,406,123 (1995); 6,734 091 (2004); 6,955, 985 (2005)

Narayan’s critical understanding of laser-solid interactions led to nonequilibrium pulsed laser evaporation at higher laser energies, and deposition of thin films. His group (along with Bell Core group) published first seminal paper on pulsed laser deposition (PLD) of thin films of high-Tc superconductors in 1987 (Most Cited # 4). Since then, PLD technique has become one of the most popular techniques for thin film deposition along with MOCVD and MBE. The PLD is proving to be an elegant nonequilibrium technique, lending itself to higher quality films of multicomponent systems at lower thermal budgets with fewer processing steps. Singh and Narayan developed a theoretical model based upon laser plume generation and expansion to lay a firm foundation of PLD, leading to Most Cited #1 and #5. 

  1. Domain matching epitaxy: Thin film epitaxy across the misfit scale (Most Cited # 2,7, 8, 15, 20,21, 30, 42) US Patents:  # 5,406,123 (1995); 6,734 091 (2004); 6,955, 985 (2005)
 

Narayan discovered a new paradigm for thin film epitaxy across the misfit scale based upon matching of integral multiples of lattice planes across the film-substrate interface. Thus, the films with 2% and 25% misfits involve 49/50 and 3/4 matching, respectively. If the misfit falls in between the integral multiples, it is accommodated by the principle of domain variation, where two domains alternate with a certain frequency. The GaN based III-nitrides and ZnO II-oxides with misfit ranging from 13-20% on sapphire and silicon substrates can be grown by domain matching epitaxy paradigm. Since the critical thickness under such a large misfit is less than a monolayer, most of the strain is relaxed in less than two monolayers so that rest of the film can grow relatively strain-free, as demonstrated by in-situ synchrotron experiments of  ZnO growth on sapphire by Narayan and Larson (# 42). Thus, for hard materials with higher lattice friction and dislocation nucleation energy, better quality film can be grown at larger misfits with the DME paradigm. The DME paradigm has been used to grow nucleation layer, device layer, and epitaxial Ohmic contact layer to fabricate next-generation LEDs for solid state lighting. 

Kopin and Kobrite (Chinese Subsidiary of Kopin) Corporations have licensed these patents to manufacture high-efficiency LEDs and lasers on sapphire and silicon substrates. 

(6) Nanotechnology for high-efficiency LEDs and lasers: (Applied Phys Lett. 81, 841 (2002); 81, 3978 (2002)); US Patents: # 6,881,983 (2005); 6,847,052 (2005); 7,122,841(2006) 

Narayan and Kopin engineers have invented novel “Nano Pocket” LEDs where carriers are quantum confined by introducing a thickness variation to control the bandgap of GaInN/GaN quantum wells. This technology has been used to further enhance quantum efficiency of solid-state LEDs to compete effectively with fluorescent lighting. The thickness variation is introduced during thin film growth as a result of misfit strain between GaInN and GaN layers. This phenomenon was discovered and modeled by Narayan to predict processing parameters and optimize the structures for high efficiency. 

(7) Defects and interfaces in thin film heterostructures 

(a) Ge/Si(100) and Si-Ge/Si(100) thin film heterostructures (Most Cited # 37, 41 66, 96) 

Narayan proposed the mechanism of misfit stress relaxation by nucleation of slip dislocation at the steps on the free surface of the film, above a critical thickness. In the case of Si-Ge/Si(100) heterostructure, he verified them to be 600 dislocations, via in-situ TEM experiments, which glide to the interface. Another set of correct 600 dislocations can be nucleated at the surface to form 900 dislocations or incorrect Burgers vectors of the second set can lead to formation of stacking faults. Narayan and coworkers showed that critical thickness is increased under tensile stress because of higher dislocation nucleation energy, and it can be also increased under three-dimensional growth conditions. Narayan calculated core energy and core radii of dislocations and established orientation dependence of core energy of dislocations, which forms the basis for obtaining dislocation-free silicon wafers for devices.  He published seminal papers on defect control and reduction in semiconductor heterostructures, leading to three U.S. patents. 

 

  1. ZnO and perovskite based thin film epitaxy and devices (Most Cited # 8, , 15, , 17, 22, 33,87)
 

Narayan and coworkers pioneered epitaxial growth of ZnO films using pulsed laser deposition on sapphire (0001) and silicon (111) substrates via domain matching epitaxy. By controlling two-dimensional growth characteristics of initial layer, misfit dislocations are confined in this layer, and the rest of the film is grown relatively “defect-free.” He obtained fundamental electrical and optical properties of ZnO films as a standard for other researchers. Narayan invented a novel method of p-type doping of ZnO by bombarding with low-energy N2+ ions during thin film growth, where molecular ions break up into atomic nitrogen upon impact and get incorporated into the film. He has created novel ZnO based thin film heterostructures, where ZnO is doped with magnetic impurities, thus utilizing the charge as well as the spin of an electron for novel spintronic devices. He also invented ZnMgO alloys (of wurtzite and zince blende structure) for increasing the bandgap and ZnCdO alloys for decreasing the bandgap to cover the entire visible spectrum. The cubic ZnMgO alloys can be directly grown on Si(100) via DME for integration with silicon based microelectronics, and creation of novel smart sensor structures. These ZnO based materials have been also grown on perovskite based LSMO (p-type) materials for novel LEDs and sensors. Kopin Corporation has licensed Narayan’s US patents ( # 6,423,983(2002) and 6,518,077 (2003)) to manufacture next-generation high-efficiency ZnO based LEDs and sensors. 

  1. High-Tc based thin film heterostructures  (Most Cited # 4, 5, 6, , 44, , 65, 67, 88, 90, 92, 93,99)
 

  Narayan and his coworkers have pioneered pulsed laser deposition of high-Tc based thin film heterostructures. He discovered 1-2-4 (Y1Ba2Cu4O8) superconductors Tc> 80-100K (U.S. patent # 5,063,202) and composites 1-2-4 and 1-2-3 (Y1Ba2Cu4O7-) with enhanced flux-pinning characteristics. In addition, the 1-2-4 phase is much more stable than 1-2-3 under oxygen ambient. 

  1. Diamond and diamondlike materials (Most Cited # 13, 16, 27, 35, 36, 37, , 49, 64, 71, 75)
 

Narayan is very well known for epitaxial growth of diamond thin films on Si(100) and Cu (100)substrates. He invented (US Patent # 5,221,411(1993)) a laser method for synthesis and processing of continuous diamond thin films on nondiamond substrates such as Cu(100). He used PLD to create hydrogen-free diamondlike carbon films and  invented a new laser ablation and plasma hybrid technique to further enhance the Sp3 fraction in diamondlike films. 

(8) Novel materials: nanostructured materials (Most Cited # 24, 32, 44, 68, 69, 81, 82, 94) 

Narayan invented metal-ceramic composites having unique and improved mechanical and optical properties. The first groundbreaking paper on Ni-MgO nanocomposites appeared in 1981 (Phys Rev Lett 46, 1491). The metallic precipitates in the ceramics act as dislocation sources and modify photon-solid interactions (U.S. patent # 4,376,755 + IR-100 Award) for solar selective absorbers, cathodochromic, photochromic and data storage applications. More recently, his work has focused on metal, WC and TiN nanocomposites with theoretical modeling to explain grain size dependence on mechanical properties. Using DME and 3-D thin-film growth concepts (Volmer-Weber growth), Narayan invented 3-D self-assembled nanostructures with oriented nanodots (US Patent # 7,105,118, Sept 12, 2006), which NSF hailed as one of the breakthroughs of the year (2004).   
 
 
 

(9) High-resolution electron microscopy and other techniques and structure-property correlations ( Most Cited # 10, 12, 36, 37, 41, 50)

Narayan developed atomic-resolution electron microscopy techniques to study the atomic structure of defects (dislocations) and interfaces, which are based upon a three-step interactive procedure: calculation simulation and comparison with experimental results.  Narayan and his coworkers at ORNL also developed direct imaging of dopants distribution and lattice location by scanning transmission electron microscopy. These STEM and STEM-Z based techniques with Angstrom resolution are critical for atomic structure, chemistry and property correlations, particularly in nanostructured materials and nanocomposites. 
 
 

50 Most Cited Papers of Professor Narayan from the Web of Science


1. Title: III-nitrides: Growth, characterization, and properties  
Author(s): Jain, SC; Willander, M; Narayan, J, et al. 
Source: JOURNAL OF APPLIED PHYSICS   Volume: 87   Issue: 3   Pages: 965-1006   Published: 2000  
Times Cited: 544  
2. Title: PULSED-LASER EVAPORATION TECHNIQUE FOR DEPOSITION OF THIN-FILMS - PHYSICS AND THEORETICAL-MODEL  
Author(s): SINGH, RK; NARAYAN, J 
Source: PHYSICAL REVIEW B   Volume: 41   Issue: 13   Pages: 8843-8859   Part: A   Published: MAY 1 1990  
Times Cited: 512  
3. Title: Optical and structural properties of epitaxial MgxZn1-xO alloys  
Author(s): Sharma, AK; Narayan, J; Muth, JF, et al. 
Source: APPLIED PHYSICS LETTERS   Volume: 75   Issue: 21   Pages: 3327-3329   Published: NOV 22 1999  
Times Cited: 186  
4. Title: LASER ANNEALING OF BORON-IMPLANTED SILICON  
Author(s): YOUNG, RT; WHITE, CW; CLARK, GJ, et al. 
Source: APPLIED PHYSICS LETTERS   Volume: 32   Issue: 3   Pages: 139-141   Published: 1978  
Times Cited: 173  
5. Title: THEORETICAL-MODEL FOR DEPOSITION OF SUPERCONDUCTING THIN-FILMS USING PULSED LASER EVAPORATION TECHNIQUE  
Author(s): SINGH, RK; HOLLAND, OW; NARAYAN, J 
Source: JOURNAL OF APPLIED PHYSICS   Volume: 68   Issue: 1   Pages: 233-247   Published: JUL 1 1990  
Times Cited: 156  
6. Title: FORMATION OF THIN SUPERCONDUCTING FILMS BY THE LASER PROCESSING METHOD  
Author(s): NARAYAN, J; BIUNNO, N; SINGH, R, et al. 
Source: APPLIED PHYSICS LETTERS   Volume: 51   Issue: 22   Pages: 1845-1847   Published: NOV 30 1987  
Times Cited: 153  
7. Title: EPITAXIAL-GROWTH OF TIN FILMS ON (100) SILICON SUBSTRATES BY LASER PHYSICAL VAPOR-DEPOSITION  
Author(s): NARAYAN, J; TIWARI, P; CHEN, X, et al. 
Source: APPLIED PHYSICS LETTERS   Volume: 61   Issue: 11   Pages: 1290-1292   Published: SEP 14 1992  
Times Cited: 138  
8. Title: INSITU PROCESSING OF EPITAXIAL Y-BA-CU-O HIGH-TC SUPERCONDUCTING FILMS ON (100) SRTIO3 AND (100) YS-ZRO2 SUBSTRATES AT 500-650-DEGREES-C  
Author(s): SINGH, RK; NARAYAN, J; SINGH, AK, et al. 
Source: APPLIED PHYSICS LETTERS   Volume: 54   Issue: 22   Pages: 2271-2273   Published: MAY 29 1989  
Times Cited: 130  
9. Title: Defects and interfaces in epitaxial ZnO/alpha-Al2O3 and AlN/ZnO/alpha-Al2O3, heterostructures  
Author(s): Narayan, J; Dovidenko, K; Sharma, AK, et al. 
Source: JOURNAL OF APPLIED PHYSICS   Volume: 84   Issue: 5   Pages: 2597-2601   Published: SEP 1 1998  
Times Cited: 127  
10. Title: Structural, optical and magnetic properties of diluted magnetic semiconducting Zn1-xMnxO films  
Author(s): Tiwari, A; Jin, C; Kvit, A, et al. 
Source: SOLID STATE COMMUNICATIONS   Volume: 121   Issue: 6-7   Pages: 371-374   Published: 2002  
Times Cited: 125  
11. Title: Excitonic structure and absorption coefficient measurements of ZnO single crystal epitaxial films deposited by pulsed laser deposition  
Author(s): Muth, JF; Kolbas, RM; Sharma, AK, et al. 
Source: JOURNAL OF APPLIED PHYSICS   Volume: 85   Issue: 11   Pages: 7884-7887   Published: JUN 1 1999  
Times Cited: 123  
12. Title: Zn0.9Co0.1O-based diluted magnetic semiconducting thin films  
Author(s): Ramachandran, S; Tiwari, A; Narayan, J 
Source: APPLIED PHYSICS LETTERS   Volume: 84   Issue: 25   Pages: 5255-5257   Published: JUN 21 2004  
Times Cited: 120  
13. Title: On the grain size softening in nanocrystalline materials  
Author(s): Conrad, H; Narayan, J 
Source: SCRIPTA MATERIALIA   Volume: 42   Issue: 11   Pages: 1025-1030   Published: MAY 31 2000  
Times Cited: 109  
14. Title: INTERFACE STRUCTURES DURING SOLID-PHASE-EPITAXIAL GROWTH IN ION-IMPLANTED SEMICONDUCTORS AND A CRYSTALLIZATION MODEL  
Author(s): NARAYAN, J 
Source: JOURNAL OF APPLIED PHYSICS   Volume: 53   Issue: 12   Pages: 8607-8614   Published: 1982  
Times Cited: 106  
15. Title: SPECTROSCOPIC ELLIPSOMETRY - A NEW TOOL FOR NONDESTRUCTIVE DEPTH PROFILING AND CHARACTERIZATION OF INTERFACES  
Author(s): MCMARR, PJ; VEDAM, K; NARAYAN, J 
Source: JOURNAL OF APPLIED PHYSICS   Volume: 59   Issue: 3   Pages: 694-701   Published: FEB 1 1986  
Times Cited: 103  
16. Title: Refractive indices and absorption coefficients of MgxZn1-xO alloys  
Author(s): Teng, CW; Muth, JF; Ozgur, U, et al. 
Source: APPLIED PHYSICS LETTERS   Volume: 76   Issue: 8   Pages: 979-981   Published: FEB 21 2000  
Times Cited: 102  
17. Title: EPITAXIAL-GROWTH OF ALN THIN-FILMS ON SILICON(111) SUBSTRATES BY PULSED-LASER DEPOSITION  
Author(s): VISPUTE, RD; NARAYAN, J; WU, H, et al. 
Source: JOURNAL OF APPLIED PHYSICS   Volume: 77   Issue: 9   Pages: 4724-4728   Published: MAY 1 1995  
Times Cited: 100  
18. Title: HIGH-QUALITY EPITAXIAL ALUMINUM NITRIDE LAYERS ON SAPPHIRE BY PULSED-LASER DEPOSITION  
Author(s): VISPUTE, RD; WU, H; NARAYAN, J 
Source: APPLIED PHYSICS LETTERS   Volume: 67   Issue: 11   Pages: 1549-1551   Published: SEP 11 1995  
Times Cited: 95  
19. Title: Domain epitaxy: A unified paradigm for thin film growth  
Author(s): Narayan, J; Larson, BC 
Source: JOURNAL OF APPLIED PHYSICS   Volume: 93   Issue: 1   Pages: 278-285   Published: JAN 1 2003  
Times Cited: 94  
20. Title: P-N-JUNCTION FORMATION IN BORON-DEPOSITED SILICON BY LASER-INDUCED DIFFUSION  
Author(s): NARAYAN, J; YOUNG, RT; WOOD, RF, et al. 
Source: APPLIED PHYSICS LETTERS   Volume: 33   Issue: 4   Pages: 338-340   Published: 1978  
Times Cited: 94  
21. Title: ION-ASSISTED LASER PROCESSING OF CN(X) FILMS  
Author(s): NARAYAN, J; REDDY, J; BIUNNO, N, et al. 
Source: MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY   Volume: 26   Issue: 1   Pages: 49-53   Published: AUG 1994  
Times Cited: 93  
22. Title: NONDESTRUCTIVE DEPTH PROFILING BY SPECTROSCOPIC ELLIPSOMETRY  
Author(s): VEDAM, K; MCMARR, PJ; NARAYAN, J 
Source: APPLIED PHYSICS LETTERS   Volume: 47   Issue: 4   Pages: 339-341   Published: 1985  
Times Cited: 93  
23. Title: THIN-FILM DEPOSITION BY A NEW LASER ABLATION AND PLASMA HYBRID TECHNIQUE  
Author(s): KRISHNASWAMY, J; RENGAN, A; NARAYAN, J, et al. 
Source: APPLIED PHYSICS LETTERS   Volume: 54   Issue: 24   Pages: 2455-2457   Published: JUN 12 1989  
Times Cited: 90  
24. Title: SUBSURFACE HEATING EFFECTS DURING PULSED LASER EVAPORATION OF MATERIALS  
Author(s): SINGH, RK; BHATTACHARYA, D; NARAYAN, J 
Source: APPLIED PHYSICS LETTERS   Volume: 57   Issue: 19   Pages: 2022-2024   Published: NOV 5 1990  
Times Cited: 86  
25. Title: LASER ANNEALING OF ION-IMPLANTED SEMICONDUCTORS  
Author(s): WHITE, CW; NARAYAN, J; YOUNG, RT 
Source: SCIENCE   Volume: 204   Issue: 4392   Pages: 461-468   Published: 1979  
Times Cited: 83  
26. Title: ON EPITAXIAL-GROWTH OF DIAMOND FILMS ON (100) SILICON SUBSTRATES  
Author(s): NARAYAN, J; SRIVATSA, AR; PETERS, M, et al. 
Source: APPLIED PHYSICS LETTERS   Volume: 53   Issue: 19   Pages: 1823-1825   Published: NOV 7 1988  
Times Cited: 82  
27. Title: Aluminum nitride films on different orientations of sapphire and silicon  
Author(s): Dovidenko, K; Oktyabrsky, S; Narayan, J, et al. 
Source: JOURNAL OF APPLIED PHYSICS   Volume: 79   Issue: 5   Pages: 2439-2445   Published: MAR 1 1996  
Times Cited: 80  
28. Title: HIGH-TEMPERATURE AND IONIZATION-INDUCED EFFECTS IN LITHIUM-DOPED MGO SINGLE-CRYSTALS  
Author(s): CHEN, Y; TOHVER, HT; NARAYAN, J, et al. 
Source: PHYSICAL REVIEW B   Volume: 16   Issue: 12   Pages: 5535-5542   Published: 1977  
Times Cited: 77  
29. Title: CHARACTERISTICS OF ION-IMPLANTATION DAMAGE AND ANNEALING PHENOMENA IN SEMICONDUCTORS  
Author(s): NARAYAN, J; HOLLAND, OW 
Source: JOURNAL OF THE ELECTROCHEMICAL SOCIETY   Volume: 131   Issue: 11   Pages: 2651-2662   Published: 1984  
Times Cited: 76  
30. Title: ENHANCEMENT OF NUCLEATION AND ADHESION OF DIAMOND FILMS ON COPPER, STAINLESS-STEEL, AND SILICON SUBSTRATES  
Author(s): NARAYAN, J; GODBOLE, VP; MATERA, G, et al. 
Source: JOURNAL OF APPLIED PHYSICS   Volume: 71   Issue: 2   Pages: 966-971   Published: JAN 15 1992  
Times Cited: 75  
31. Title: ELECTRON-MICROSCOPE OBSERVATION OF SHEAR CRACKS IN STAINLESS-STEEL SINGLE-CRYSTALS  
Author(s): OHR, SM; NARAYAN, J 
Source: PHILOSOPHICAL MAGAZINE A-PHYSICS OF CONDENSED MATTER STRUCTURE DEFECTS AND MECHANICAL PROPERTIES   Volume: 41   Issue: 1   Pages: 81-89   Published: 1980  
Times Cited: 72  
32. Title: SOLID-PHASE-EPITAXIAL GROWTH AND FORMATION OF METASTABLE ALLOYS IN ION-IMPLANTED SILICON  
Author(s): NARAYAN, J; HOLLAND, OW; APPLETON, BR 
Source: JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B   Volume: 1   Issue: 4   Pages: 871-887   Published: 1983  
Times Cited: 71  
33. Title: ATOMIC-STRUCTURE OF ION-IMPLANTATION DAMAGE AND PROCESS OF AMORPHIZATION IN SEMICONDUCTORS  
Author(s): NARAYAN, J; FATHY, D; OEN, OS, et al. 
Source: JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS   Volume: 2   Issue: 3   Pages: 1303-1308   Published: 1984  
Times Cited: 68  
34. Title: LASER METHOD FOR SYNTHESIS AND PROCESSING OF CONTINUOUS DIAMOND FILMS ON NONDIAMOND SUBSTRATES  
Author(s): NARAYAN, J; GODBOLE, VP; WHITE, CW 
Source: SCIENCE   Volume: 252   Issue: 5004   Pages: 416-418   Published: APR 19 1991  
Times Cited: 61  
35. Title: Preparation and mechanical properties of composite diamond-like carbon thin films  
Author(s): Wei, Q; Narayan, RJ; Sharma, AK, et al. 
Source: JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS   Volume: 17   Issue: 6   Pages: 3406-3414   Published: NOV-DEC 1999  
Times Cited: 60  
36. Title: DISLOCATIONS, TWINS, AND GRAIN-BOUNDARIES IN CVD DIAMOND THIN-FILMS - ATOMIC-STRUCTURE AND PROPERTIES  
Author(s): NARAYAN, J 
Source: JOURNAL OF MATERIALS RESEARCH   Volume: 5   Issue: 11   Pages: 2414-2423   Published: NOV 1990  
Times Cited: 60  
37. Title: PULSED LASER MELTING OF AMORPHOUS-SILICON LAYERS  
Author(s): NARAYAN, J; WHITE, CW 
Source: APPLIED PHYSICS LETTERS   Volume: 44   Issue: 1   Pages: 35-37   Published: 1984  
Times Cited: 60  
38. Title: RAPID THERMAL ANNEALING OF ION-IMPLANTED SEMICONDUCTORS  
Author(s): NARAYAN, J; HOLLAND, OW 
Source: JOURNAL OF APPLIED PHYSICS   Volume: 56   Issue: 10   Pages: 2913-2921   Published: 1984  
Times Cited: 60  
39. Title: EPITAXIAL-GROWTH IN LARGE-LATTICE-MISMATCH SYSTEMS  
Author(s): ZHELEVA, T; JAGANNADHAM, K; NARAYAN, J 
Source: JOURNAL OF APPLIED PHYSICS   Volume: 75   Issue: 2   Pages: 860-871   Published: JAN 15 1994  
Times Cited: 59  
40. Title: A NOVEL METHOD FOR SIMULATING LASER-SOLID INTERACTIONS IN SEMICONDUCTORS AND LAYERED STRUCTURES  
Author(s): SINGH, RK; NARAYAN, J 
Source: MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY   Volume: 3   Issue: 3   Pages: 217-230   Published: AUG 1989  
Times Cited: 56  
41. Title: ATOMIC-STRUCTURE OF DISLOCATIONS IN SILICON, GERMANIUM AND DIAMOND  
Author(s): NANDEDKAR, AS; NARAYAN, J 
Source: PHILOSOPHICAL MAGAZINE A-PHYSICS OF CONDENSED MATTER STRUCTURE DEFECTS AND MECHANICAL PROPERTIES   Volume: 61   Issue: 6   Pages: 873-891   Published: JUN 1990  
Times Cited: 55  
42. Title: COMPARATIVE-STUDY OF LASER AND THERMAL ANNEALING OF BORON-IMPLANTED SILICON  
Author(s): NARAYAN, J; YOUNG, RT; WHITE, CW 
Source: JOURNAL OF APPLIED PHYSICS   Volume: 49   Issue: 7   Pages: 3912-3917   Published: 1978  
Times Cited: 55  
43. Title: Novel cubic ZnxMg1-xO epitaxial hetero structures on Si (100) substrates  
Author(s): Narayan, J; Sharma, AK; Kvit, A, et al. 
Source: SOLID STATE COMMUNICATIONS   Volume: 121   Issue: 1   Pages: 9-13   Published: 2002  
Times Cited: 54  
44. Title: EFFECT OF THE CHEMICAL NATURE OF TRANSITION-METAL SUBSTRATES ON CHEMICAL-VAPOR-DEPOSITION OF DIAMOND  
Author(s): CHEN, X; NARAYAN, J 
Source: JOURNAL OF APPLIED PHYSICS   Volume: 74   Issue: 6   Pages: 4168-4173   Published: SEP 15 1993  
Times Cited: 54  
45. Title: RAPID THERMAL ANNEALING OF ARSENIC AND BORON-IMPLANTED SILICON  
Author(s): NARAYAN, J; HOLLAND, OW; EBY, RE, et al. 
Source: APPLIED PHYSICS LETTERS   Volume: 43   Issue: 10   Pages: 957-959   Published: 1983  
Times Cited: 53  
46. Title: CHARACTERIZATION OF DAMAGE IN ION-IMPLANTED GE  
Author(s): APPLETON, BR; HOLLAND, OW; NARAYAN, J, et al. 
Source: APPLIED PHYSICS LETTERS   Volume: 41   Issue: 8   Pages: 711-712   Published: 1982  
Times Cited: 50  
47. Title: ATOMIC-STRUCTURE OF DISLOCATIONS AND DIPOLES IN SILICON  
Author(s): NANDEDKAR, AS; NARAYAN, J 
Source: PHILOSOPHICAL MAGAZINE A-PHYSICS OF CONDENSED MATTER STRUCTURE DEFECTS AND MECHANICAL PROPERTIES   Volume: 56   Issue: 5   Pages: 625-639   Published: NOV 1987  
Times Cited: 49  
48. Title: DIAMOND, DIAMOND-LIKE AND TITANIUM NITRIDE BIOCOMPATIBLE COATINGS FOR HUMAN-BODY PARTS  
Author(s): NARAYAN, J; FAN, WD; NARAYAN, RJ, et al. 
Source: MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY   Volume: 25   Issue: 1   Pages: 5-10   Published: JUN 1994  
Times Cited: 48  
49. Title: PULSED-LASER MELTING OF AMORPHOUS-SILICON - TIME-RESOLVED MEASUREMENTS AND MODEL-CALCULATIONS  
Author(s): LOWNDES, DH; WOOD, RF; NARAYAN, J 
Source: PHYSICAL REVIEW LETTERS   Volume: 52   Issue: 7   Pages: 561-564   Published: 1984  
Times Cited: 48
 
 
 
 
 
 
 
 
 

Recent Papers in Acta Materialia and Scripta Materialia

  1. On the grain size softening in nanocrystalline materials (Citation classic) 
    Author(s): Conrad H, Narayan J  
    Source: SCRIPTA MATERIALIA   Volume: 42   Issue: 11   Pages: 1025-1030   Published: MAY 31 2000
  2. Preparation of bulk ultrafine-grained and nanostructured Zn, Al and their alloys by in situ consolidation of powders during mechanical attrition  
    Author(s): Zhang X, Wang H, Kassem M, et al. 
    Source: SCRIPTA MATERIALIA   Volume: 46   Issue: 9   Pages: 661-665   Published: MAY 10 2002
  3. Synthesis of bulk nanostructured Zn by combinations of cryomilling and powder consolidation by room temperature milling: optimizing mechanical properties  
    Author(s): Zhu XK, Zhang X, Wang H, et al. 
    Source: SCRIPTA MATERIALIA   Volume: 49   Issue: 5   Pages: 429-433   Published: SEP 2003
  4. Thin film epitaxy and structure property correlations for non-polar ZnO films  
    Author(s): Pant P, Budai JD, Aggarwal R, et al. 
    Source: ACTA MATERIALIA   Volume: 57   Issue: 15   Pages: 4426-4431   Published: SEP 2009
  5. Formation of single and multiple deformation twins in nanocrystalline fcc metals  
    Author(s): Zhu YT, Narayan J, Hirth JP, et al. 
    Source: ACTA MATERIALIA   Volume: 57   Issue: 13   Pages: 3763-3770   Published: AUG 2009
  6. Magnetic properties and their dependence on deposition parameters of Co/Al2O3 multilayers grown by pulsed laser deposition  
    Author(s): Aggarwal R, Nori S, Jin CM, et al. 
    Source: ACTA MATERIALIA   Volume: 57   Issue: 6   Pages: 2040-2046   Published: APR 2009
  7. Mechanisms for grain size hardening and softening in Zn  
    Author(s): Conrad H, Narayan J  
    Source: ACTA MATERIALIA   Volume: 50   Issue: 20   Pages: 5067-5078   Published: DEC 3 2002
  8. Studies of deformation mechanisms in ultra-fine-grained and nanostructured Zn  
    Author(s): Zhang X, Wang H, Scattergood RO, et al. 
    Source: ACTA MATERIALIA   Volume: 50   Issue: 19   Pages: 4823-4830   Published: NOV 14 2002
  9. Modulated oscillatory hardening and dynamic recrystallization in cryomilled nanocrystalline Zn  
    Author(s): Zhang X, Wang H, Scattergood RO, et al. 
    Source: ACTA MATERIALIA   Volume: 50   Issue: 16   Pages: 3995-4004   Published: SEP 20 2002
  10. Mechanical properties of cyromilled nanocrystalline Zn studied by the miniaturized disk bend test  
    Author(s): Zhang X, Wang H, Scattergood RO, et al. 
    Source: ACTA MATERIALIA   Volume: 50   Issue: 13   Pages: 3527-3533   Published: AUG 1 2002
  11. Evidence for the formation mechanism of nanoscale microstructures in cryomilled Zn powder  
    Author(s): Zhang X, Wang H, Narayan J, et al. 
    Source: ACTA MATERIALIA   Volume: 49   Issue: 8   Pages: 1319-1326   Published: MAY 8 2001
  12. Nonpolar ZnO film growth and mechanism for anisotropic in-plane strain relaxation

    Author(s): P. Pant, J. Budai, and J. Narayan

    Acta Materialia  Volume 58 (2009). 
     
     
     
     
     
     
     
     
     
     
     
     
     

    Nanomaterials Breakthrough announced by NSF: Google: jagdish Narayan not so spotty material

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